Toshiba DTMOSVI MOSFETs
Toshiba DTMOSVI MOSFETs offer a low drain-source on-resistance of 0.033Ω (typical), a drain-source voltage of 650V, and a drain current of 57A. The DTMOSVI MOSFETs offer high-speed switching properties with lower capacitance. These MOSFETs are ideal for use in switching power supply applications.
Specifications
- 650V drain-source voltage
- ±30V gate-source voltage
- 57A drain current at +25°C
- 228A drain current (pulsed)
- 0.033Ω typical drain-source on-resistance at 10V, 28.5A
- 360W power dissipation
- 3V minimum gate threshold voltage at 10V/2.85mA, 4V maximum
- 6250pF input capacitance
- 105nC total gate charge
Videos
Drawing
Application Notes
- Bipolar Transistors: Electrical Characteristics
- Bipolar Transistors: Maximum Ratings
- Bipolar Transistors: Terms
- Bipolar Transistors: Thermal Stability and Design
- Calculating the Temperature of Discrete Semiconductor Devices
- Derating of the MOSFET Safe Operating Area
- Hints and Tips for Thermal Design for Discrete Semiconductor Devices: Part 1
- Hints and Tips for Thermal Design for Discrete Semiconductor Devices: Part 2
- Hints and Tips for Thermal Design for Discrete Semiconductor Devices: Part 3
- IGBTs (Insulated Gate Bipolar Transistors)
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Gate Drive Circuit
- MOSFET Paralleling (Parasitic Oscillation between Parallel Power MOSFETs)
- MOSFET Self-Turn-On Phenomenon
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFETs: Maximum Ratings
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Published: 2018-08-22
| Updated: 2024-03-12