TK095N65Z5,S1F

Toshiba
757-TK095N65Z5S1F
TK095N65Z5,S1F

Mfr.:

Description:
MOSFETs 650V DTMOS6-HSD TO-247 95mohm

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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In Stock: 30

Stock:
30 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:

Pricing (DKK)

Qty. Unit Price
Ext. Price
44,39 kr. 44,39 kr.
29,99 kr. 299,90 kr.
25,14 kr. 3.016,80 kr.
23,87 kr. 12.173,70 kr.

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-247-3
N-Channel
1 Channel
650 V
29 A
95 mOhms
- 30 V, 30 V
4.5 V
50 nC
+ 150 C
230 W
Enhancement
Tube
Brand: Toshiba
Configuration: Single
Fall Time: 4 ns
Product Type: MOSFETs
Rise Time: 40 ns
Factory Pack Quantity: 30
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 95 ns
Typical Turn-On Delay Time: 75 ns
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Attributes selected: 0

TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

DTMOSVI MOSFETs

Toshiba DTMOSVI MOSFETs offer a low drain-source on-resistance of 0.033Ω (typical), a drain-source voltage of 650V, and a drain current of 57A. The DTMOSVI MOSFETs offer high-speed switching properties with lower capacitance. These MOSFETs are ideal for use in switching power supply applications.

TK095N65Z5 Silicon N-Channel (DTMOSVI) MOSFET

Toshiba TK095N65Z5 Silicon N-Channel (DTMOSVI) MOSFET is a 650V, 95mΩ high-speed MOSFET in a TO-247 package. Designed for use in switching voltage regulator applications, TK095N65Z5 offers a fast recovery time (115ns typical) and a low drain-source on-resistance (0.079Ω typical). This MOSFET provides high-speed switching properties with a low capacitance.