Texas Instruments LMG3612 Single-Channel GaN FET

Texas Instruments LMG3612 Single-Channel GaN FET offers a 650V drain-source voltage and 120mΩ drain-source resistance with an integrated driver designed for switch-mode power-supply applications. This IC combines the GaN FET, gate driver, and protection features in an 8mm x 5.3mm QFN package. The LMG3612 GaN FET features a low output-capacitive charge that reduces the time and energy required for power converter switching. This transistor's internal gate driver regulates the drive voltage for optimum GaN FET on-resistance. The internal gate driver reduces total gate inductance and GaN FET common-source inductance for improved switching performance, including Common-Mode Transient Immunity (CMTI). The LMG3612 GaN FET supports converter light-load efficiency requirements and burst-mode operation with 55µA low quiescent currents and fast start-up times.