onsemi NTBG023N065M3S 23mΩ EliteSiC MOSFET
onsemi NTBG023N065M3S 23mΩ EliteSiC MOSFET offers an M3S planar technology for fast-switching applications in a D2PAK-7L package. This MOSFET features 650V drain-to-source voltage, 40A continuous drain current, 263W power dissipation, and 216A pulsed drain current. The NTBG023N065M3S MOSFET integrates an ultra-low gate charge and high-speed switching MOSFET with low capacitance (Coss = 153pF). This MOSFET operates at -55°C to 175°C temperature range and is 100% avalanche-tested. The NTBG023N065M3S MOSFET is Halide-free and RoHS compliant with a 7a exemption. Typical applications include Switching Mode Power Supplies (SMPS), solar inverters, UPS, energy storage, and EV charging infrastructure.
Features
- 650V drain-to-source voltage
- 23mΩ typical @VGS = 18V
- Ultra-low gate charge (QG(tot) = 69nC)
- High-speed switching with low capacitance (Coss = 153pF)
- -8V/+22V gate-to-source voltage
- 40A continuous drain current
- 263W power dissipation
- -55°C to 175°C operating junction temperature range
- 100% avalanche tested
- Halide-free
- RoHS compliant with exemption 7a
- Pb-free 2LI (on second-level interconnection)
Applications
- Switching Mode Power Supplies (SMPS)
- Solar inverters
- UPS
- Energy storages
- EV charging infrastructure
Dimension Diagram
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Published: 2024-07-31
| Updated: 2024-08-22