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NTBG023N065M3S

Name: onsemi NTBG023N065M3S
Brand: onsemi
SKU: 863-NTBG023N065M3S
Price: 73.33 DKK
Availability: InStock

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Mouser No:

863-NTBG023N065M3S

Mfr. No:

NTBG023N065M3S

Mfr.:

onsemi

Description:

SiC MOSFETs SIC MOS D2PAK-7L 23MOHM 650V M3S

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

NTBG023N065M3S Datasheet

ECAD Model:

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More Information

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In Stock: 680

Stock:: 680 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	73,33 kr.	73,33 kr.
	50,88 kr.	508,80 kr.
	43,04 kr.	4.304,00 kr.
Full Reel (Order in multiples of 800)
	40,21 kr.	32.168,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	40 A
Rds On - Drain-Source Resistance:	33 mOhms
Vgs - Gate-Source Voltage:	- 8 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	69 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	263 W
Channel Mode:	Enhancement
Tradename:	EliteSiC
Brand:	onsemi
Configuration:	Single
Fall Time:	9.6 ns
Packaging:	Reel
Packaging:	Cut Tape
Product:	SiC MOSFETS
Product Type:	SiC MOSFETS
Rise Time:	15 ns
Series:	NTBG023N065M3S
Factory Pack Quantity:	800
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	35 ns
Typical Turn-On Delay Time:	11 ns

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Datasheet

NTBG023N065M3S Datasheet

TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

NTBG023N065M3S 23mΩ EliteSiC MOSFET

onsemi NTBG023N065M3S 23mΩ EliteSiC MOSFET offers an M3S planar technology for fast-switching applications in a D2PAK-7L package. This MOSFET features 650V drain-to-source voltage, 40A continuous drain current, 263W power dissipation, and 216A pulsed drain current. The NTBG023N065M3S MOSFET integrates an ultra-low gate charge and high-speed switching MOSFET with low capacitance (Coss = 153pF). This MOSFET operates at -55°C to 175°C temperature range and is 100% avalanche-tested. The NTBG023N065M3S MOSFET is Halide-free and RoHS compliant with a 7a exemption. Typical applications include Switching Mode Power Supplies (SMPS), solar inverters, UPS, energy storage, and EV charging infrastructure.

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onsemi NTBG025N065SC1 19mohm Silicon Carbide MOSFET is housed in a D2PAK-7L package and designed to be fast and rugged. The onsemi NTBG025N065SC1 devices offer a 10x higher dielectric breakdown field strength and 2x higher electron saturation velocity. The MOSFETs also offer a 3x higher energy band gap and 3x higher thermal conductivity. All onsemi SiC MOSFETs include AEC-Q101 qualified and PPAP-capable options specifically engineered and qualified for automotive and industrial applications.

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