ROHM Semiconductor Schottky Barrier Diodes
ROHM Semiconductor Schottky Barrier Diodes have a wide array of high-reliability, low-loss devices and are available in various packages. The Schottky Diodes provide low forward voltage and reverse current with high ESD resistance. Thermal runaway is blocked even at high temperatures, making them excellent for automotive systems and power supplies. The diodes are Standard or AEC-Q101 Qualified. The RBE diodes feature improved efficiency and the low VF. ROHM Semiconductor Schottky Barrier Diodes occupy 80% less space and provide a large current-handling capability.
Features
- High reliability
- Improved efficiency
- Low VF
- Occupies 80% less space
- Large current handling capability
- Low heat generation and noise during normal operation
- Low Forward Voltage (VF)
- High-speed Reverse Recovery Time (trr)
- Soft recovery characteristics ensure high-efficiency operation with low loss
Applications
- Backflow prevention circuits
- DC/DC converters
Circuit Application
Space Reduction Illustration
Average Rectified Current Comparison
Associated Diodes
ROHM Semiconductor RBQx Schottky Barrier Diodes
Feature AEC-Q101 qualified high-reliability low IR diodes for general rectification.
ROHM Semiconductor RB Series Schottky Barrier Diodes
Designed for general rectification with high reliability and low reverse current.
ROHM Semiconductor Automotive Schottky Barrier Diodes
A wide array of high-reliability, low-loss diodes are available in various packages.
ROHM Semiconductor RASMID™ Schottky Barrier Diodes
Ideal for high-density applications like smartphones and other portable devices.
ROHM Semiconductor SiC Schottky Barrier Diodes
Lower capacitive charge reduces switching loss, enabling high-speed switching operation.
ROHM Semiconductor RB7x Schottky Barrier Diodes
AEC-Q101 qualified high-reliability automotive diodes that are suitable for high-speed switching.
ROHM Semiconductor RBRxxBGE Schottky Barrier Diodes
Features a silicon epitaxial planar structure and 30V, 40V, or 60V repetitive peak reverse voltage.
ROHM Semiconductor RBQxxBGE Schottky Barrier Diodes
Features a silicon epitaxial planar structure and 45V or 65V repetitive peak reverse voltage.