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ROHM Semiconductor RBQx Schottky Barrier Diodes

ROHM Semiconductor RBQx Schottky Barrier Diodes are AEC-Q101 qualified high-reliability low IR diodes for general rectification. These diodes feature a power mold type, cathode common dual type, and Silicon epitaxial planar structure. The RBQx Schottky barrier diodes from ROHM Semiconductor are stored at -55°C to +150°C temperature range. These diodes function at +150°C junction temperature and 100A peak forward surge current. The RBQx Schottky barrier diodes are ideal for switching power supply.

Features

  • High reliability
  • Power mold type
  • Silicon epitaxial planar structure
  • Cathode common dual type
  • Low IR

Specifications

  • +150°C junction temperature
  • -55°C to +150°C storage temperature range
  • 100A peak forward surge current

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Published: 2020-04-07 | Updated: 2024-09-26