SiC MOSFETs

Results: 54
Select Image Part # Mfr. Description Datasheet Availability Pricing (DKK) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A 1In Stock
600Expected 30/07/2027
Cut Tape
134,88 kr.
100,71 kr.
87,13 kr.
Reel
82,51 kr.
Min.: 1
Mult.: 1
: 600
AEC-Q100
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package 558In Stock
155,99 kr.
124,88 kr.
107,95 kr.
102,28 kr.
Min.: 1
Mult.: 1
Through Hole HiP247-3 1 Channel 900 V 110 A 15.8 mOhms - 10 V, + 22 V 3.1 V 138 nC - 55 C + 200 C 625 W Enhancement AEC-Q101
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package 443In Stock
177,85 kr.
142,34 kr.
123,09 kr.
116,60 kr.
Min.: 1
Mult.: 1
Through Hole HiP-247-4 1 Channel 1.2 kV 129 A 15 mOhms - 18 V, + 18 V 4.2 V 167 nC - 55 C + 200 C 673 W Enhancement AEC-Q101


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package 181In Stock
600On Order
128,46 kr.
76,09 kr.
Min.: 1
Mult.: 1
Through Hole Hip247-4 1 Channel 1.2 kV 100 A 28 mOhms - 10 V, + 22 V 3 V 121 nC - 55 C + 200 C 541 W Enhancement AEC-Q101
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package 472In Stock
1.000On Order
Cut Tape
87,28 kr.
49,68 kr.
49,53 kr.
Reel
46,85 kr.
Min.: 1
Mult.: 1
: 1.000
SMD/SMT H2PAK-7 1 Channel 650 V 60 A 39.3 mOhms - 10 V, + 22 V 3 V 48.6 nC - 55 C + 175 C 300 W Enhancement AEC-Q101


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A 187In Stock
90,71 kr.
60,72 kr.
56,32 kr.
47,89 kr.
Min.: 1
Mult.: 1
Through Hole HiP-247-4 1 Channel 650 V 60 A 29 mOhms - 18 V, + 18 V 4.2 V 51 nC - 55 C + 200 C 313 W Enhancement AEC-Q100


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package 856In Stock
Cut Tape
85,19 kr.
63,48 kr.
52,97 kr.
47,15 kr.
Reel
44,01 kr.
Min.: 1
Mult.: 1
: 1.000
SMD/SMT H2PAK-7 1 Channel 1.2 kV 40 A 54 mOhms - 18 V, + 18 V 4.2 V 54 nC - 55 C + 175 C 300 W Enhancement AEC-Q101


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A 641In Stock
600Expected 30/07/2027
89,74 kr.
68,41 kr.
56,99 kr.
50,80 kr.
47,45 kr.
Min.: 1
Mult.: 1
Through Hole HiP-247-4 1 Channel 1.2 kV 40 A 54 mOhms - 18 V, + 18 V 4.2 V 56 nC - 55 C + 200 C 312 W Enhancement AEC-Q100


STMicroelectronics SiC MOSFETs Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package 457In Stock
72,44 kr.
39,61 kr.
36,26 kr.
Min.: 1
Mult.: 1
Through Hole HiP247-4 1 Channel 650 V 30 A 63 mOhms - 10 V, + 22 V 3 V 37.5 nC - 55 C + 200 C 240 W Enhancement


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package 429In Stock
85,19 kr.
63,48 kr.
52,97 kr.
47,15 kr.
44,01 kr.
Min.: 1
Mult.: 1
Through Hole HiP247-4 1 Channel 650 V 30 A 63 mOhms - 10 V, + 22 V 3 V 37.5 nC - 55 C + 200 C 240 W Enhancement AEC-Q101
STMicroelectronics SiC MOSFETs Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package 1.394In Stock
Cut Tape
64,45 kr.
44,01 kr.
36,33 kr.
32,30 kr.
30,29 kr.
Reel
30,29 kr.
Min.: 1
Mult.: 1
: 1.800
SMD/SMT TOLL-8 1 Channel 650 V 30 A 72 mOhms - 10 V, + 22 V 3 V 31 nC - 55 C + 175 C 234 W Enhancement
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package 19In Stock
1.200Expected 29/10/2026
Cut Tape
142,86 kr.
106,68 kr.
92,35 kr.
Reel
87,36 kr.
Min.: 1
Mult.: 1
: 600
SMD/SMT HU3PAK-7 1 Channel 1.2 kV 100 A 28 mOhms - 10 V, + 22 V 3 V 121 nC - 55 C 555 W Enhancement AEC-Q101


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package 43In Stock
600On Order
121,60 kr.
75,64 kr.
70,94 kr.
Min.: 1
Mult.: 1
Through Hole HiP247-3 1 Channel 1.2 kV 56 A 37 mOhms - 10 V, + 22 V 3 V 73 nC - 55 C + 200 C 388 W Enhancement AEC-Q101


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package 20In Stock
1.200On Order
88,55 kr.
59,16 kr.
55,65 kr.
49,91 kr.
46,92 kr.
Min.: 1
Mult.: 1
Through Hole HiP-247-4 1 Channel 1.2 kV 30 A 87 mOhms - 18 V, + 18 V 4.2 V 41 nC - 55 C + 200 C 236 W Enhancement AEC-Q101
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A 537In Stock
1.000Expected 02/07/2027
Cut Tape
84,45 kr.
62,96 kr.
52,44 kr.
46,70 kr.
Reel
43,72 kr.
Min.: 1
Mult.: 1
: 1.000
SMD/SMT 1 Channel 650 V 30 A 40 mOhms - 10 V, + 22 V 4.2 V 39.5 nC - 55 C + 175 C 221 W Enhancement AEC-Q101


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package 6In Stock
1.000Expected 03/09/2027
Cut Tape
105,63 kr.
63,34 kr.
Reel
59,16 kr.
Min.: 1
Mult.: 1
: 1.000
SMD/SMT H2PAK-7 1 Channel 650 V 55 A 27 mOhms - 18 V, + 18 V 4.2 V 79.4 nC - 55 C + 175 C 385 W Enhancement AEC-Q101


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package 3In Stock
1.200On Order
128,46 kr.
83,40 kr.
73,78 kr.
67,89 kr.
Min.: 1
Mult.: 1
Through Hole HiP-247-4 1 Channel 1.2 kV 56 A 37 mOhms - 18 V, + 18 V 4.2 V 73 nC - 55 C + 200 C 388 W Enhancement AEC-Q101
STMicroelectronics SiC MOSFETs Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package 8In Stock
1.800Expected 10/06/2027
Cut Tape
71,99 kr.
50,88 kr.
42,37 kr.
37,82 kr.
35,29 kr.
Reel
35,29 kr.
Min.: 1
Mult.: 1
: 1.800
SMD/SMT TOLL-8 1 Channel 650 V 35 A 63 mOhms - 10 V, + 22 V 3 V 42.5 nC - 55 C + 175 C 288 W Enhancement


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package 14In Stock
600Expected 03/09/2027
89,74 kr.
68,41 kr.
56,99 kr.
50,80 kr.
47,45 kr.
Min.: 1
Mult.: 1
Through Hole HiP-247-3 1 Channel 1.2 kV 40 A 54 mOhms - 18 V, + 18 V 4.2 V 56 nC - 55 C + 200 C 312 W Enhancement AEC-Q101
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A
988Expected 09/07/2027
Cut Tape
180,68 kr.
144,57 kr.
125,03 kr.
118,46 kr.
Reel
110,63 kr.
Min.: 1
Mult.: 1
: 1.000
AEC-Q100
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package
1.200Expected 06/08/2027
Cut Tape
197,76 kr.
158,30 kr.
136,89 kr.
Reel
129,65 kr.
Min.: 1
Mult.: 1
: 600
SMD/SMT HU3PAK-7 1 Channel 750 V 110 A 15 mOhms - 10 V, + 22 V 3.2 V 154 nC - 55 C + 175 C 652 W Enhancement AEC-Q101
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
1.985On Order
Cut Tape
173,00 kr.
138,53 kr.
119,81 kr.
113,39 kr.
Reel
106,01 kr.
Min.: 1
Mult.: 1
: 1.000
SMD/SMT H2PAK-7 1 Channel 1.2 kV 112 A 22 mOhms - 10 V, + 22 V 3 V 150 nC - 55 C + 175 C 652 W Enhancement AEC-Q101
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
1.997Expected 16/04/2027
Cut Tape
117,79 kr.
72,96 kr.
71,99 kr.
Reel
66,47 kr.
Min.: 1
Mult.: 1
: 1.000
SMD/SMT H2PAK-7 1 Channel 1.2 kV 55 A 37 mOhms - 10 V, + 22 V 3 V 73 nC - 55 C + 175 C 375 W Enhancement AEC-Q101


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
998Expected 04/06/2027
Cut Tape
147,93 kr.
96,01 kr.
95,86 kr.
90,56 kr.
Reel
84,60 kr.
Min.: 1
Mult.: 1
: 1.000
SMD/SMT H2PAK-7 1 Channel 900 V 110 A 12 mOhms - 18 V, + 18 V 4.2 V 138 nC - 55 C + 175 C 625 W Enhancement AEC-Q101


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
600Expected 05/11/2027
119,81 kr.
91,31 kr.
76,09 kr.
63,34 kr.
Min.: 1
Mult.: 1
Through Hole HiP-247-4 1 Channel 650 V 55 A 27 mOhms - 18 V, + 18 V 4.2 V 77 nC - 55 C + 200 C 398 W Enhancement AEC-Q101