IGBT7 Discretes

Infineon Technologies IGBT7 Discretes are the 7th generation of TRENCHSTOP™ IGBTs, created with micro-pattern trench technology. The advanced technology delivers unparalleled control and performance, resulting in significant loss reduction, improved efficiency, and increased power density in applications.

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Description Datasheet Availability Pricing (DKK) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Package/Case
Mounting Style
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Infineon Technologies IGBTs 1200 V, 100 A IGBT7 S7 with anti-parallel diode in TO247PLUS-3pin package
Datasheet
1.097In Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 188 A 824 W - 40 C + 175 C IGBT7 S7 Tube
Infineon Technologies IGBTs 1200 V, 50 A IGBT with anti-parallel diode in TO-247PLUS 4pin package
Datasheet
397In Stock
Min.: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBTs 650 V, 150 A IGBT with anti-parallel diode in TO247PLUS-4 package
Datasheet
318In Stock
Min.: 1
Mult.: 1

Si TO-247-4 Through Hole Single 650 V 1.6 V - 20 V, 20 V 160 A 621 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBTs 650 V, 40 A IGBT with anti-parallel diode in TO247-4 package
Datasheet
317In Stock
Min.: 1
Mult.: 1

Si TO-247-4 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 210 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 75 A IGBT with anti-parallel diode in TO-247PLUS-3pin package
Datasheet
258In Stock
Min.: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube


Infineon Technologies IGBTs 1200 V, 50 A IGBT7 S7 with anti-parallel diode in TO-247 package
Datasheet
1.661In Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 82 A 428 W - 40 C + 175 C IGBT7 S7 Tube
Infineon Technologies IGBTs 1200 V, 120 A IGBT7 S7 in TO247PLUS-3pin package
Datasheet
303In Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 216 A 1.004 kW - 40 C + 175 C IGBT7 S7 Tube
Infineon Technologies IGBTs 1200 V, 100 A IGBT7 S7 in TO247PLUS-3pin package
Datasheet
1.570In Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 188 A 824 W - 40 C + 175 C IGBT7 S7 Tube


Infineon Technologies IGBTs 1200 V, 15 A IGBT7 S7 with anti-parallel diode in TO-247 package
Datasheet
432In Stock
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 36 A 176 W - 40 C + 175 C IGBT7 S7 Tube
Infineon Technologies IGBTs 1200 V, 75 A IGBT with anti-parallel diode in TO-247 3pin package
Datasheet
350In Stock
480Expected 15/10/2026
Min.: 1
Mult.: 1

IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 140 A IGBT with anti-parallel diode in TO-247PLUS 4pin package
Datasheet
390In Stock
480Expected 28/01/2027
Min.: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 100 A IGBT with anti-parallel diode in TO-247PLUS 4pin package
Datasheet
680In Stock
Min.: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 120 A IGBT7 S7 with anti-parallel diode in TO247PLUS-3pin package
Datasheet
161In Stock
240On Order
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 216 A 1.004 kW - 40 C + 175 C IGBT7 S7 Tube
Infineon Technologies IGBTs 650 V, 120 A IGBT with anti-parallel diode in TO247PLUS-3 package
Datasheet
Lead-Time 45 Weeks
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 160 A 498 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBTs 650 V, 150 A IGBT with anti-parallel diode in TO247PLUS-3 package
Datasheet
138In Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 160 A 621 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 75 A IGBT7 S7 with anti-parallel diode in TO247PLUS-3pin package
Datasheet
156In Stock
720On Order
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 154 A 630 W - 40 C + 175 C IGBT7 S7 Tube
Infineon Technologies IGBTs 1200 V, 50 A IGBT with anti-parallel diode in TO-247 3pin package
Datasheet
203In Stock
240Expected 19/11/2026
Min.: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBTs 650 V, 50 A IGBT with anti-parallel diode in TO-247-3 HCC package
Datasheet
202In Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 249 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 75 A IGBT with anti-parallel diode in TO247PLUS 4pin package
Datasheet
157In Stock
Min.: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBTs 650 V, 50 A IGBT with anti-parallel diode in TO247-4 package
Datasheet
97In Stock
Min.: 1
Mult.: 1

Si TO-247-4 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 250 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 120 A IGBT with anti-parallel diode in TO-247PLUS-3pin package
Datasheet
79In Stock
Min.: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 120 A IGBT with anti-parallel diode in TO-247PLUS 4pin package
Datasheet
149In Stock
240Expected 09/10/2026
Min.: 1
Mult.: 1

Si IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 40 A IGBT with anti-parallel diode in TO-247 4pin package
Datasheet
182In Stock
Min.: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBTs 650 V, 40 A IGBT with anti-parallel diode in TO-247 package
Datasheet
763In Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.35 V - 20 V, 20 V 76 A 230.8 W - 40 C + 175 C IGBT7 T7 Tube
Infineon Technologies IGBTs 650 V, 75 A IGBT with anti-parallel diode in TO-247 package
Datasheet
834In Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.35 V - 20 V, 20 V 80 A 333 W - 40 C + 175 C IGBT7 T7 Tube