It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

STD155N3LH6

Name: STMicroelectronics STD155N3LH6
Brand: STMicroelectronics
SKU: 511-STD155N3LH6
Price: 15.14 DKK
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

511-STD155N3LH6

Mfr. No:

STD155N3LH6

Mfr.:

STMicroelectronics

Description:

MOSFETs Nchannel 30 V 0.0024 Ohm80A DPAK STripFET

Complete Your Design

Datasheet:

STD155N3LH6 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about STMicroelectronics STD155N3LH6

In Stock: 823

Stock:: 823 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- kr.

Ext. Price:

-,-- kr.

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+47,00 kr.)

Pricing (DKK)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	15,14 kr.	15,14 kr.
	9,77 kr.	97,70 kr.
	6,61 kr.	661,00 kr.
	5,18 kr.	2.590,00 kr.
	4,89 kr.	4.890,00 kr.
Full Reel (Order in multiples of 2500)
	4,70 kr.	11.750,00 kr.

† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	80 A
Rds On - Drain-Source Resistance:	3 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	80 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	110 W
Channel Mode:	Enhancement
Qualification:	AEC-Q100
Tradename:	STripFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Product Type:	MOSFETs
Series:	STD155N3LH6
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Unit Weight:	330 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

STD155N3LH6 Datasheet (PDF)

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

STripFET Power MOSFETs

STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET technology with a new gate structure. The resulting STripFET Power MOSFET exhibits the high current and low R_DS(on) required by automotive and industrial switching applications such as motor control, uninterruptible power supplies (UPS), DC/DC converters, induction heater vaporizers, and solar. STMicroelectronics STripFET Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.

AEC-Q101 Qualified STripFET Power MOSFETs

STMicroelectronics AEC-Q101 Qualified STripFET Power MOSFETs utilize ST's proprietary trench-based low voltage technology, achieving extremely low conduction losses. These STMicroelectronics power MOSFETs minimize the energy normally lost in electrical drives, leading to greater efficiency and making them suitable for many applications. Housed in industry-standard TO-252 and TO-263 SMD packages with R_DS(on) ranging from 3mΩ to 12.5mΩ, these devices perform well in most low-voltage automotive applications. This product range includes both standard and logic-level thresholds.