onsemi NVBG080N120SC1 1200V SiC MOSFET
onsemi NVBG080N120SC1 1200V SiC MOSFET provides superior switching performance and higher reliability than Silicon. This MOSFET has a low ON resistance and compact chip size, ensuring low capacitance and gate charge. onsemi NVBG080N120SC1 MOSFET features high efficiency, fast operation frequency, increased power density, reduced electromagnetic interference (EMI), and reduced system size. Typical applications include automotive onboard chargers and automotive DC/DC converters for EV/HEV.
Features
- Superior switching performance and higher reliability than silicon
- 80mΩ typical RDS(on)
- 1200V drain-to-source resistance (V(BR)DSS)
- 30A maximum drain current (ID)
- 56nC ultra-low gate charge (QG(tot))
- 79pF low effective output capacitance (typical) (COSS)
- Qualified for automotive applications according to AEC-Q101
- 100% avalanche tested
Applications
- Automotive
- Onboard chargers
- DC/DC converters for electric vehicles (EVs)/hybrid electric vehicles (HEVs)
- Inverters
Additional Resource
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Published: 2020-09-18
| Updated: 2024-08-23