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Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs

Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs feature top-side cooling and offer an additional venue for thermal transfer. These MOSFETs come in the PowerPAK® SO-8DC package. The TrenchFET double cooling MOSFETs offer variants with different drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V. These N-channel MOSFETs operate at a temperature range from -55°C to 150°C. The TrenchFET MOSFETs can be utilized for product-specific applications including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.

Features

  • TrenchFET® power MOSFET
  • Top-side cooling feature provides an additional venue for thermal transfer
  • 100% Rg and UIS tested
  • PowerPAK SO-8DC package

Specifications

  • Drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V
  • -55°C to 150°C operating temperature range

Applications

  • Synchronous rectification
  • DC/DC converters
  • SiDR626DP, SiDR638DP, SiDR668DP, SiDR680DP, SiDR668ADP and SiDR870ADP: 
    • Motor drive control
    • Battery and load switch
  • SiDR140DP, SiDR390DP, SiDR392DP, SiDR402DP, and SiDR668ADP
    • OR-ing
    • Load switch
    • High power density DC/DC
  • SiDR610DP, and SiDR668ADP:
    • Power supplies
    • Class D amplifier
  • SiDR622DP, SiDR668ADP:
    • Primary side switching
    • H-bridge

Related Products

Vishay / Siliconix TrenchFET® Gen IV MOSFETs

Offers an industry-low on-resistance down to 1.35mΩ at 4.5V.

Learn Moreabout Vishay / Siliconix TrenchFET® Gen IV MOSFETs View Productsrelated to Vishay / Siliconix TrenchFET® Gen IV MOSFETs

Typical Characteristics

Performance Graph - Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs

PowerPAK® SO-8 Double Cooling Case Outline

Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs
Published: 2018-06-20 | Updated: 2022-03-10