Vishay / Siliconix SiS890ADN N-Channel 100V MOSFET
Vishay / Siliconix SiS890ADN N-Channel 100V MOSFET offers 100VDC drain-source voltage, 40A pulsed drain current, and a single configuration. It features low RDS x Qg figure-of-merit (FOM) along with TrenchFET® GEn IV power. This MOSFET is 100% Rg and UIS tested. Vishay SiS890ADN N-Channel 100V MOSFET is ideally suited for synchronous rectification, primary side switches, DC/DC converters, and circuit protection.
Features
- TrenchFET Gen IV power MOSFET
- Low RDS x Qg figure-of-merit (FOM)
- Tuned for the lowest RDS x Qoss FOM
- 100% Rg and UIS tested
- RoHS-compliant
- Halogen-free
Applications
- Synchronous rectification
- Primary side switches
- DC/DC converters
- Motor drive switches
- Circuit protection
- Load switches
Dimensions
Related MOSFETs
Vishay / Siliconix Power MOSFETs
Low-to-high power MOSFETs that meet the increasing demands of applications in growth markets.
Published: 2020-11-19
| Updated: 2024-12-16