The RF5L08350CB4 is a 400W 50V high-performance, internally matched LDMOS FET designed for multiple applications over the frequency band 0.4 to 1GHz.
The RF3L05250CB4 is a 250W 28/32V LDMOS FET designed for wide-band communication and ISM applications with frequencies from HF to 1GHz. The RF3L05250CB4 pin connection is used in class AB/B and C for all typical modulation formats.
The RF2L16180CB4 is 180W, 28V internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1600MHz. Four leads can be configured as single-ended, 180-degree push-pull or 90-degree hybrid, or Doherty with proper external matching network.
The RF2L36075CF2 is a 75W internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base stations and S-Band radar applications in the frequency range from 3.1 to 3.6GHz. The RF2L36075CF2 can be used in class AB, B, or C for all typical cellular base station modulation formats.
Features
- High efficiency and linear gain operations
- Integrated ESD protection
- Internal input matching for ease of use
- Large positive and negative gate-source voltage range for improved class C operation
- In compliance with the european directive 2002/95/EC
Applications
- Telecom
- S-Band radar
- Multicarrier base station
- Industrial, scientific and medical
- 2-30MHz HF or short wave communication
- 30-88MHz ground communication
- 118-140MHz Avionics
- 136-174MHz commercial ground communication
- 30-512MHz Jammer, ground/air communication
- HF to 1000 MHz ISM - instrumentation
- Wideband lab amplifier from 0.4 to 1GHz
- Digital UHF TV 470-860MHz
- 650MHz particle accelerator
- 915MHz RF energy applications
Pin Connections

