Vishay / Siliconix SQW61N65EF Automotive E Series Power MOSFET
Vishay / Siliconix SQW61N65EF Automotive E Series Power MOSFET is a single N-channel fast body diode MOSFET with automotive-grade E-series technology. The SQW61N65EF features a reduced reverse recovery time, reverse recovery charge, and reverse recovery current. The device also boasts a 229nC gate charge and 0.045Ω drain-source on-state resistance, resulting in an ultra-low Figure-of-Merit (FOM). The AEC-Q101-qualified SQW61N65EF offers a wide -55°C to +175°C operating junction temperature range, making it ideal for automotive applications. Vishay / Siliconix SQW61N65EF Automotive E Series Power MOSFET is offered in a 3-lead TO-247AD package and is RoHS compliant and halogen-free.
Features
- AEC-Q101 qualified
- Fast body diode MOSFET using Automotive Grade E series technology
- 700V maximum drain-source voltage (VDS) at TJ
- 650V drain-source voltage (VDS) at 25°C
- ±30V gate-source voltage (VGS)
- 0.045Ω drain-source on-state resistance (RDS(on))
- 229nC gate charge (Qg)
- Low figure-of-merit (FOM) (RDS(on)) x Qg
- 204ns reduced reverse recovery time (trr)
- 1.9μC reverse recovery charge (Qrr)
- 18A reverse recovery current (IRRM)
- Low 7379pF input capacitance (Ciss)
- Low switching losses due to reduced reverse recovery charge
- 625W maximum power dissipation (PD)
- Avalanche energy rated (UIS)
- -55°C to +175°C operating junction and storage temperature range (TJ, Tstg)
- 3-lead TO-247AD package
- Halogen free, lead free, and RoHS compliant
Applications
- Automotive onboard chargers
- Automotive DC-DC converters
eBook
Internal Circuit & Typical Output
Switching Time Test Circuit
Gate Charge Test Circuit
Package Outline
Infographic
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Published: 2021-03-29
| Updated: 2022-06-07