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onsemi NXH600B100H4Q2F2SG Si/SiC Hybrid Module

onsemi NXH600B100H4Q2F2SG Si/SiC Hybrid Module is a three-channel symmetric boost module. Each channel contains two 1000V, 200A IGBTs, and two 1200V, 60A SiC diodes. The module also contains an NTC thermistor. Applications include solar inverters and uninterruptible power supply systems.

Features

  • Extremely efficient trench with field stop technology
  • Low switching loss reduces system power dissipation
  • Module design offers high power density
  • Low inductive layout
  • Low package height
  • Lead-free, Halogen-free/BFR-free, and RoHS-compliant

Applications

  • Solar inverters
  • Uninterruptible power supply systems
  • MPPT boost stages

Specifications

  • IGBT (T11, T21, T12, T22, T13, T23)
    • 1000V maximum collector-emitter voltage
    • ±20V maximum gate-emitter voltage
    • 30V maximum positive transient gate-emitter voltage
    • 192A maximum continuous collector current
    • 576A maximum pulsed peak collector current
    • 511W maximum power dissipation
  • IGBT inverse diode (D11, D21, D12, D22, D13, D23)
    • 1200V maximum peak repetitive reverse voltage
    • 66A maximum continuous forward current
    • 198A maximum repetitive peak forward current
    • 101W maximum power dissipation
  • Silicon carbide Schottky diode (D31, D41, D32, D42, D33, D43)
    • 1200V maximum peak repetitive reverse voltage
    • 73A maximum continuous forward current
    • 219A maximum repetitive peak forward current
    • 217W maximum power dissipation
  • 12.7mm maximum creepage distance
  • Temperature ranges
    • -40°C to +175°C junction
    • -40°C to +150°C operation under switching conditions

Schematic

Schematic - onsemi NXH600B100H4Q2F2SG Si/SiC Hybrid Module

Learn More About EliteSiC

onsemi EliteSiC

Addresses the needs of demanding applications like solar inverters, and electric vehicle chargers.

Learn Moreabout onsemi EliteSiC
Published: 2024-01-30 | Updated: 2024-08-08