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onsemi NVMFD5873NL Dual N-Channel Power MOSFETs

onsemi NVMFD5873NL Dual N-Channel Power MOSFETs are designed for compact and efficient designs, including high thermal performance. These MOSFETs feature low resistance (RDS(on)) to minimize conduction losses and low capacitance to minimize driver losses. The NVMFD5873NL power MOSFETs offer a wettable flanks option for enhanced optical inspection. These MOSFETs are AEC−Q101 qualified and PPAP capable. The NVMFD5873NL power MOSFETs are ideal for motor control and a high-side/low-side switch.

Features

  • Low RDS(on) to minimize conduction losses
  • Low capacitance to minimize driver losses
  • Wettable flanks option for enhanced optical inspection
  • AEC-Q101 qualified
  • PPAP capable
  • Pb, halogen, and BFR free
  • 5mm x 6mm dual SO-8FL package

Applications

  • Motor control
  • High-side/low-side switch

Specifications

  • 60V drain-to-source voltage
  • ±20V gate-to-source voltage
  • 190A pulsed drain current (TA=25°C, tp=10μs)
  • 58A source current (body diode)
  • -55°C to 175°C operating junction and storage temperature range

Dual N−Channel MOSFET

onsemi NVMFD5873NL Dual N-Channel Power MOSFETs

Additional Resources

Published: 2026-02-25 | Updated: 2026-03-13