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onsemi NTH4L075N065SC1 57mohm Silicon Carbide MOSFET

onsemi NTH4L075N065SC1 57mohm Silicon Carbide MOSFET is housed in a TO-247-4L package and designed to be fast and rugged. The onsemi NTH4L075N065SC1 devices offer a 10x higher dielectric breakdown field strength and 2x higher electron saturation velocity. The MOSFETs also offer a 3x higher energy band gap and 3x higher thermal conductivity. All onsemi SiC MOSFETs include AEC-Q101 qualified and PPAP-capable options specifically engineered and qualified for automotive and industrial applications.

Features

  • Typ. RDS(on) = 57m @ VGS = 18V
  • Typ. RDS(on) = 75m @ VGS = 15V
  • Ultra Low Gate Charge (QG(tot) = 61nC)
  • Low Output Capacitance (Coss = 107pF)
  • 100% Avalanche Tested
  • TJ = 175°C
  • This Device is Halide free and RoHS compliant with exemption 7a, Pb-free 2LI (on second level interconnection)

Applications

  • SMPS (Switching Mode Power Supplies)
  • Solar inverters
  • UPS (Uninterruptable Power Supplies)
  • Energy storages

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Published: 2022-08-23 | Updated: 2024-06-19