Back to onsemi

onsemi NTH4L025N065SC1 19mohm Silicon Carbide MOSFET

onsemi NTH4L025N065SC1 19mohm Silicon Carbide MOSFET is housed in a TO-247-4L package and designed to be fast and rugged. The onsemi NTH4L025N065SC1 devices offer a 10x higher dielectric breakdown field strength and 2x higher electron saturation velocity. The MOSFETs also offer a 3x higher energy band gap and 3x higher thermal conductivity. All onsemi SiC MOSFETs include AEC-Q101 qualified and PPAP-capable options specifically engineered and qualified for automotive and industrial applications.

Features

  • Typ. RDS(on) = 19m @ VGS = 18V
  • Typ. RDS(on) = 25m @ VGS = 15V
  • Ultra Low Gate Charge (QG(tot) = 164nC)
  • Low Capacitance (Coss = 278pF)
  • 100% Avalanche Tested
  • TJ = 175°C
  • This Device is halide-free and RoHS compliant with exemption 7a, Pb-free 2LI (on second-level interconnection)

Applications

  • SMPS (Switching Mode Power Supplies)
  • Solar inverters
  • UPS (Uninterruptable Power Supplies)
  • Energy storages

Related Products

onsemi 650V Silicon Carbide (SiC) MOSFETs

Provides superior switching performance and higher reliability compared to Silicon.

Learn Moreabout onsemi 650V Silicon Carbide (SiC) MOSFETs View Productsrelated to onsemi 650V Silicon Carbide (SiC) MOSFETs

onsemi M2 EliteSiC MOSFETs

Feature voltage options of 650V, 750V, and 1200V.

Learn Moreabout onsemi M2 EliteSiC MOSFETs View Productsrelated to onsemi M2 EliteSiC MOSFETs

onsemi Pairing Gate Drivers with EliteSiC MOSFETs

Full portfolio of Gate Drivers and EliteSiC Mosfets that, when paired, improve thermal performance.

Learn Moreabout onsemi Pairing Gate Drivers with EliteSiC MOSFETs View Productsrelated to onsemi Pairing Gate Drivers with EliteSiC MOSFETs

Learn More About EliteSiC

onsemi EliteSiC

Addresses the needs of demanding applications like solar inverters, and electric vehicle chargers.

Learn Moreabout onsemi EliteSiC
Published: 2022-08-23 | Updated: 2023-07-27