onsemi NSBAMXW PNP Bias Resistor Transistors

onsemi NSBAMXW PNP Bias Resistor Transistors (BRTs) are designed to replace a single device and the related external resistor bias network. These PNP Bias Resistor Transistors contain a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. The BRTs eliminate individual components by integrating all into a single device. The use of a BRT reduces system cost and board space. Theonsemi NSBAMXW are housed in an XDFNW3 package offering superior thermal performance. These devices are ideal for surface-mount applications where board space and reliability are at a premium.

Features

  • Built-in bias resistors
  • Complimentary NPN types available (NSBCMXW)
  • XDFNW3 Case 521AC package with a low 0.44mm (maximum) seated height
  • Wettable flank package for optimal Automated Optical Inspection (AOI)
  • Class 1B Electrostatic Discharge (ESD) rating (HBM)
  • NSV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable
  • Lead-free, Halogen-free/BFR-free, and RoHS-compliant

Applications

  • Digital switching
  • Controlling IC inputs

Specifications

  • -50V maximum collector-emitter/-base voltage
  • 100mA maximum collector current
  • -100nA maximum collector-base cutoff current
  • -500nA maximum collector-emitter cutoff current
  • -1.5mA to -0.2mA maximum emitter-base cutoff current range
  • -0.25V maximum collector-emitter saturation voltage
  • -0.8V to -0.3V maximum input voltage (off) range
  • -2.4V to -1.15V typical input voltage (on) range
  • 0.2V maximum output voltage (on)
  • 4.9V minimum output voltage (off)
  • 6.1kΩ to 61.1kΩ maximum bias resistor range
  • Thermal
    • 450mW maximum total power dissipation
    • 145°C/W juunction-to-ambient thermal resistance
    • -65°C to +150°C junction temperature range

Pni Connections

Mechanical Drawing - onsemi NSBAMXW PNP Bias Resistor Transistors
Published: 2025-08-29 | Updated: 2025-09-09