onsemi NSBAMXW PNP Bias Resistor Transistors
onsemi NSBAMXW PNP Bias Resistor Transistors (BRTs) are designed to replace a single device and the related external resistor bias network. These PNP Bias Resistor Transistors contain a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. The BRTs eliminate individual components by integrating all into a single device. The use of a BRT reduces system cost and board space. Theonsemi NSBAMXW are housed in an XDFNW3 package offering superior thermal performance. These devices are ideal for surface-mount applications where board space and reliability are at a premium.Features
- Built-in bias resistors
- Complimentary NPN types available (NSBCMXW)
- XDFNW3 Case 521AC package with a low 0.44mm (maximum) seated height
- Wettable flank package for optimal Automated Optical Inspection (AOI)
- Class 1B Electrostatic Discharge (ESD) rating (HBM)
- NSV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable
- Lead-free, Halogen-free/BFR-free, and RoHS-compliant
Applications
- Digital switching
- Controlling IC inputs
Specifications
- -50V maximum collector-emitter/-base voltage
- 100mA maximum collector current
- -100nA maximum collector-base cutoff current
- -500nA maximum collector-emitter cutoff current
- -1.5mA to -0.2mA maximum emitter-base cutoff current range
- -0.25V maximum collector-emitter saturation voltage
- -0.8V to -0.3V maximum input voltage (off) range
- -2.4V to -1.15V typical input voltage (on) range
- 0.2V maximum output voltage (on)
- 4.9V minimum output voltage (off)
- 6.1kΩ to 61.1kΩ maximum bias resistor range
- Thermal
- 450mW maximum total power dissipation
- 145°C/W juunction-to-ambient thermal resistance
- -65°C to +150°C junction temperature range
Pni Connections
Published: 2025-08-29
| Updated: 2025-09-09
