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Nexperia PMDXB600UNEL 20V Dual N-Channel Trench MOSFET

Nexperia PMDXB600UNEL 20V Dual N-Channel Trench MOSFET is an enhancement mode Field-Effect Transistor (FET) housed in a leadless ultrasmall surface-mounted plastic package. The PMDXB600UNEL features a low leakage current, and an exposed drain pad for excellent thermal conduction. Typical applications include relay drivers, high-speed line drivers, low-side load switches, and switching circuits.

Features

  • Low leakage current
  • Leadless ultrasmall and ultrathin SMD plastic package
    • 1.1mm x 1.0mm x 0.37mm
  • Exposed drain pad for excellent thermal conduction
  • ElectroStatic Discharge (ESD) protection > 1kV HBM
  • Drain-source on-state resistance RDSon = 470mΩ

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits

Videos

Published: 2017-03-23 | Updated: 2022-03-11