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Infineon Technologies CY62177EV30 MOBL™ Async SRAM

Infineon Technologies CY62177EV30 MOBL™ Async SRAM is designed as a high-performance CMOS static RAM organized as 2M words by 16 bits and 4M words by 8 bits. CY62177EV30 features an advanced circuit design to offer ultra-low active current. The device is ideal for providing More Battery Life™ (MOBL™) in portable applications such as cellular telephones. In addition, CY62177EV30 includes an automatic power-down feature that significantly reduces power consumption by 99 percent when addresses are not toggling.

Features

  • Thin small outline package (TSOP) I configurable as 2M × 16 or as 4M × 8 static RAM (SRAM)
  • 55ns Very high speed
  • 2.2V to 3.7V Wide voltage range
  • Ultra low standby power
    • 3µA Typical standby current
    • 25µA Maximum standby current
  • Ultra low active power
    • Typical active current of 4.5mA at f = 1MHz
  • Easy memory expansion with CE1, CE2, and OE features
  • Automatic power down when deselected
  • Complementary Metal Oxide Semiconductor (CMOS) for optimum speed and power
  • Available in Pb-free 48-ball TSOP I package

Block Diagram

Block Diagram - Infineon Technologies CY62177EV30 MOBL™ Async SRAM
Published: 2014-04-30 | Updated: 2023-04-25