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Infineon Technologies CY15B004Q 4-Kbit Serial (SPI) Automotive F-RAM

Infineon Technologies CY15B004Q 4-Kbit Serial (SPI) Automotive F-RAM is a nonvolatile memory that uses an advanced ferroelectric process. Ferroelectric random access memory, or F-RAM, is nonvolatile and performs reads/writes similar to RAM. The CY15B004Q provides reliable data retention for 121 years while eliminating complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories.

Features

  • 4Kbit ferroelectric random access memory (F-RAM) logically organized as 512×8
    • High-endurance 10 trillion (1013) read/writes
    • 121-year data retention (See the Data Retention and Endurance table)
    • NoDelay™ writes
    • Advanced high-reliability ferroelectric process
  • Very fast serial peripheral interface (SPI)
    • Up to 16MHz frequency
    • Direct hardware replacement for serial flash and EEPROM
    • Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
  • Sophisticated write protection scheme
    • Hardware protection using the Write Protect (WP) pin
    • Software protection using Write Disable instruction
    • Software block protection for 1/4, 1/2, or an entire array
  • Low power consumption
    • 200μA active current at 1MHz
    • 6μA (typ) standby current at +85°C
  • 3.0V to 3.6V VDD  Low-voltage operation
  • –40°C to +125°C Automotive-E temperature
  • 8-pin small outline integrated circuit (SOIC) package
  • AEC Q100 Grade 1 compliant
  • Restriction of hazardous substances (RoHS) compliant

Block Diagram

Block Diagram - Infineon Technologies CY15B004Q 4-Kbit Serial (SPI) Automotive F-RAM
Published: 2018-09-12 | Updated: 2022-08-10