Diodes Incorporated DXTN69060C 60V NPN Ultra-Low VCE(SAT) Transistors

Diodes Incorporated DXTN69060C 60V NPN Ultra-Low V_CE(SAT) Transistor features a proprietary structure for achieving ultra-low V_CE(SAT) performance and lower operating temperatures, minimizing thermal management needs and enhancing long-term reliability. The Diodes Incorporated DXTN69060C specifications include a breakdown voltage (BV_CEO) of over 60V, continuous collector current of 5.5A, and a low saturation voltage of less than 45mV at 1A. With a high current R_CE(sat) typical at 24mΩ, hFE characterization up to 6A, 2W power dissipation, and fast switching with short storage time, this transistor is designed for efficient, reliable performance in high-power applications.