Infineon Technologies Resonant Wireless Charging - Consumer Applications

Infineon Technologies Resonant Wireless Charging - Consumer Applications takes the lead in fast switching in power transfer topologies. With excellent figure of merit (FOM) for gate charge times, R_DS(on) and Coss, these charging solutions enable 6.78MHz inverter designs. Advanced power MOSFET technology addresses frequency switching implementations, especially in the 30-10V areas for class D inverter designs and in the 150-250V voltage class for class E inverter designs.

The strength of Infineon's wireless charging solution lies in its modular software-based architecture. With the cool-running driver ICs, low-side drivers for class E implementations in the portfolio, and XMC™ - SC wireless power controller based on the ARM® Cortex®-M0 core, Infineon provides a powerful and cost-effective platform for high-performance, smart and safe wireless charging applications. For transmitter designs using a pre-regulator (buck or buck/boost) to control the input voltage of the amplifier OptiMOS™ solutions can be found in the 20-400V MOSFETs section.

System diagram: Resonant wireless charging – class D, full-bridge

TOPOLOGIES FOR RESONANT SYSTEM REQUIREMENTS

View Solution Parts

GALLIUM NITRIDE (GAN) AND WIRELESS CHARGING

With adding gallium nitride to its technology offering, Infineon is in the unique position to redesign all power technologies from silicon (Si) - superjunction MOSFETs, through discrete IGBTs and modules - to wide bandgap materials like silicon carbide (SiC) and gallium nitride (GaN).

CoolGaN™ was developed to meet and exceed the wireless power design needs of tomorrow and maximize the overall system performance. Due to its significantly reduced parasitic capacitances, it is the ideal choice for switching at frequencies in the MHz range (e.g. 6.78 MHz as required by the AirFuel Alliance wireless charging standard).

With CoolGaN™, Infineon launches a GaN enhancement mode high electron mobility transistor (e-mode HEMT) portfolio with industry-leading field performance enabling rugged and reliable systems at an attractive overall system cost. GaN switch performance features low gate charge and excellent dynamic performance in reverse conduction compared to silicon FET options. This enables more efficient operation at existing frequencies, and much higher frequency operation which can improve power density by shrinking the size of passive components.

COSS is a critical design factor in wireless power transfer systems at higher frequencies and CoolGaN™ 600V e-mode HEMTs enable optimal tuning in class E amplifiers especially above 30 W.