Apogee Semiconductor AP54RHC08 Logic Gates

Apogee Semiconductor AP54RHC08 Logic Gates are fabricated in a 180nm CMOS process utilizing proprietary radiation-hardening techniques. These gates deliver high resiliency to Single-Event Effects (SEE) and Total Ionizing Dose (TID) with 30krad (Si) at 5V and 70krad (Si) at 3.3V. The AP54RHC08 gates operate over a supply voltage range of 1.65V to 5.5V. These gates feature a triple-redundant design throughout the circuitry, making them immune to SET without requiring additional redundant devices. The AP54RHC08 logic gates provide four instances of the Boolean logical function AND (Y=A·B). These gates are ideally suited for commercial space and other applications demanding radiation tolerance and high reliability. Typical applications include LEO constellations, small satellites, nuclear/medical imaging, and glue logic.

Features

  • 1.65V DC to 5.5V DC operation
  • Inputs are tolerant up to 5.5V DC at any VCC
  • Provides logic-level down translation to VCC
  • -55°C to +125°C extended operating temperature range
  • Proprietary cold sparing capability with zero static power penalty
  • Built-in triple redundancy for enhanced reliability
  • Internal Power-On Reset (POR) circuitry ensures reliable power-up and power-down responses during hot plug and cold sparing operations
  • Class1 C ESD protection (1000V HBM, 500V CDM)
  • TID resilience of 30krad (Si) assured at 5V and characterized to 70krad (Si) at 3.3V
  • SEL immune to LET of 75MeV-cm2/mg
  • Meets NASA’s ASTME595 outgassing specification
  • Moisture sensitivity level - MSL 1

Applications

  • LEO constellations
  • Small satellites
  • Nuclear/medical imaging
  • Glue logic

Logic Diagram

Block Diagram - Apogee Semiconductor AP54RHC08 Logic Gates

Truth Table

Apogee Semiconductor AP54RHC08 Logic Gates
Published: 2026-10-29 | Updated: 2026-10-29