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SiC MOSFETs SiC MOSFET BVDSS: 650V-1000V TO247 TUBE 30PS
- DMWSH65H34HM3Q
- Diodes Incorporated
-
1:
129,43 kr.
-
Non-Stocked Lead-Time 36 Weeks
-
New Product
|
Mouser Part No
621-DMWSH65H34HM3Q
New Product
|
Diodes Incorporated
|
SiC MOSFETs SiC MOSFET BVDSS: 650V-1000V TO247 TUBE 30PS
|
|
Non-Stocked Lead-Time 36 Weeks
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
650 V
|
80.2 A
|
34 mOhms
|
- 10 V, 20 V
|
3.6 V
|
95.4 nC
|
- 55 C
|
+ 175 C
|
328 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFETs SiC MOSFET BVDSS: 650V-1000V TO247 TUBE 30PS
- DMWSH65H60HM3
- Diodes Incorporated
-
1:
83,33 kr.
-
Non-Stocked Lead-Time 36 Weeks
-
New Product
|
Mouser Part No
621-DMWSH65H60HM3
New Product
|
Diodes Incorporated
|
SiC MOSFETs SiC MOSFET BVDSS: 650V-1000V TO247 TUBE 30PS
|
|
Non-Stocked Lead-Time 36 Weeks
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
650 V
|
51 A
|
60 mOhms
|
- 10 V, 20 V
|
3.6 V
|
72.8 nC
|
- 55 C
|
+ 175 C
|
229 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFETs SiC MOSFET BVDSS: 650V-1000V TO247 TUBE 30PS
- DMWSH65H60HM3Q
- Diodes Incorporated
-
1:
106,01 kr.
-
Non-Stocked Lead-Time 36 Weeks
-
New Product
|
Mouser Part No
621-DMWSH65H60HM3Q
New Product
|
Diodes Incorporated
|
SiC MOSFETs SiC MOSFET BVDSS: 650V-1000V TO247 TUBE 30PS
|
|
Non-Stocked Lead-Time 36 Weeks
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
650 V
|
51 A
|
60 mOhms
|
- 10 V, 20 V
|
3.6 V
|
72.8 nC
|
- 55 C
|
+ 175 C
|
229 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFETs SiC MOSFET BVDSS: >1000V TO263-7 T&R 0.8K
- DMWSH170H850HCT7Q-13
- Diodes Incorporated
-
800:
10,22 kr.
-
Non-Stocked Lead-Time 40 Weeks
-
New Product
|
Mouser Part No
621-H170H850HCT7Q-13
New Product
|
Diodes Incorporated
|
SiC MOSFETs SiC MOSFET BVDSS: >1000V TO263-7 T&R 0.8K
|
|
Non-Stocked Lead-Time 40 Weeks
|
|
Min.: 800
Mult.: 800
:
800
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.7 kV
|
7.1 A
|
0.85 Ohms
|
- 10 V, 25 V
|
4 V
|
15.7 nC
|
- 55 C
|
+ 175 C
|
64.38 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFETs SiC MOSFET BVDSS: >1000V TO263-7 T&R 0.8K
- DMWSH170H850HCT7-13
- Diodes Incorporated
-
800:
8,13 kr.
-
Non-Stocked Lead-Time 40 Weeks
-
New Product
|
Mouser Part No
621-SH170H850HCT7-13
New Product
|
Diodes Incorporated
|
SiC MOSFETs SiC MOSFET BVDSS: >1000V TO263-7 T&R 0.8K
|
|
Non-Stocked Lead-Time 40 Weeks
|
|
Min.: 800
Mult.: 800
:
800
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.7 kV
|
7.1 A
|
0.85 Ohms
|
- 10 V, 25 V
|
4 V
|
15.7 nC
|
- 55 C
|
+ 175 C
|
64.38 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFETs CoolSiC MOSFET discrete 1200V, 22 mohm G2
- IMZC120R022M2HXKSA1
- Infineon Technologies
-
1:
122,12 kr.
-
Lead-Time 53 Weeks
|
Mouser Part No
726-IMZC120R022M2HXK
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET discrete 1200V, 22 mohm G2
|
|
Lead-Time 53 Weeks
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
80 A
|
22 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
329 W
|
Enhancement
|
|
CoolSiC
|
|
|
|
SiC MOSFETs SiC, MOSFET, 60mO, 650V, TO-263-7 T&R, Industrial
- C3M0060065J-TR
- Wolfspeed
-
800:
29,47 kr.
-
Non-Stocked
|
Mouser Part No
941-C3M0060065J-TR
|
Wolfspeed
|
SiC MOSFETs SiC, MOSFET, 60mO, 650V, TO-263-7 T&R, Industrial
|
|
Non-Stocked
|
|
Min.: 800
Mult.: 800
:
800
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
650 V
|
36 A
|
60 mOhms
|
- 4 V, + 15 V
|
3.6 V
|
46 nC
|
- 40 C
|
+ 175 C
|
136 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFETs SILICON CARBIDE MOSFET
- IMBG65R030M1HXTMA1
- Infineon Technologies
-
1.000:
46,92 kr.
-
Non-Stocked Lead-Time 52 Weeks
-
NRND
|
Mouser Part No
726-IMBG65R030M1HXTM
NRND
|
Infineon Technologies
|
SiC MOSFETs SILICON CARBIDE MOSFET
|
|
Non-Stocked Lead-Time 52 Weeks
|
|
Min.: 1.000
Mult.: 1.000
:
1.000
|
|
|
SMD/SMT
|
|
1 Channel
|
650 V
|
63 A
|
42 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
49 nC
|
- 55 C
|
+ 175 C
|
234 W
|
Enhancement
|
|
CoolSiC
|
|
|
|
SiC MOSFETs SILICON CARBIDE MOSFET
- IMBG65R039M1HXTMA1
- Infineon Technologies
-
1.000:
39,54 kr.
-
Non-Stocked Lead-Time 52 Weeks
-
NRND
|
Mouser Part No
726-IMBG65R039M1HXTM
NRND
|
Infineon Technologies
|
SiC MOSFETs SILICON CARBIDE MOSFET
|
|
Non-Stocked Lead-Time 52 Weeks
|
|
Min.: 1.000
Mult.: 1.000
:
1.000
|
|
|
SMD/SMT
|
|
1 Channel
|
650 V
|
54 A
|
51 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
41 nC
|
- 55 C
|
+ 175 C
|
211 W
|
Enhancement
|
|
CoolSiC
|
|
|
|
SiC MOSFETs SILICON CARBIDE MOSFET
- IMBG65R083M1HXTMA1
- Infineon Technologies
-
1.000:
24,92 kr.
-
Non-Stocked Lead-Time 52 Weeks
-
NRND
|
Mouser Part No
726-IMBG65R083M1HXTM
NRND
|
Infineon Technologies
|
SiC MOSFETs SILICON CARBIDE MOSFET
|
|
Non-Stocked Lead-Time 52 Weeks
|
|
Min.: 1.000
Mult.: 1.000
:
1.000
|
|
|
SMD/SMT
|
|
1 Channel
|
650 V
|
28 A
|
111 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
44 nC
|
- 55 C
|
+ 175 C
|
126 W
|
Enhancement
|
|
CoolSiC
|
|
|
|
SiC MOSFETs 1200V 40mohm TO-247-4 G3R SiC MOSFET
- G3R40MT12K
- GeneSiC Semiconductor
-
1:
113,39 kr.
-
Non-Stocked Lead-Time 26 Weeks
|
Mouser Part No
905-G3R40MT12K
|
GeneSiC Semiconductor
|
SiC MOSFETs 1200V 40mohm TO-247-4 G3R SiC MOSFET
|
|
Non-Stocked Lead-Time 26 Weeks
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
55 A
|
40 mOhms
|
- 5 V, + 15 V
|
2.7 V
|
88 nC
|
- 55 C
|
+ 175 C
|
228 W
|
Enhancement
|
|
|
|