MOSFETs SiC MOSFETs

Results: 161
Select Image Part # Mfr. Description Datasheet Availability Pricing (DKK) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification Tradename
Diodes Incorporated SiC MOSFETs SiC MOSFET BVDSS: 650V-1000V TO247 TUBE 30PS Non-Stocked Lead-Time 36 Weeks
129,43 kr.
98,55 kr.
82,13 kr.
73,18 kr.
62,29 kr.
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 80.2 A 34 mOhms - 10 V, 20 V 3.6 V 95.4 nC - 55 C + 175 C 328 W Enhancement
Diodes Incorporated SiC MOSFETs SiC MOSFET BVDSS: 650V-1000V TO247 TUBE 30PS Non-Stocked Lead-Time 36 Weeks
83,33 kr.
62,07 kr.
51,70 kr.
46,10 kr.
39,17 kr.
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 51 A 60 mOhms - 10 V, 20 V 3.6 V 72.8 nC - 55 C + 175 C 229 W Enhancement
Diodes Incorporated SiC MOSFETs SiC MOSFET BVDSS: 650V-1000V TO247 TUBE 30PS Non-Stocked Lead-Time 36 Weeks
106,01 kr.
80,72 kr.
67,21 kr.
59,90 kr.
50,95 kr.
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 51 A 60 mOhms - 10 V, 20 V 3.6 V 72.8 nC - 55 C + 175 C 229 W Enhancement
Diodes Incorporated SiC MOSFETs SiC MOSFET BVDSS: >1000V TO263-7 T&R 0.8K Non-Stocked Lead-Time 40 Weeks
Reel
10,22 kr.
9,47 kr.
8,65 kr.
Min.: 800
Mult.: 800
: 800
SMD/SMT TO-263-7 1 Channel 1.7 kV 7.1 A 0.85 Ohms - 10 V, 25 V 4 V 15.7 nC - 55 C + 175 C 64.38 W Enhancement
Diodes Incorporated SiC MOSFETs SiC MOSFET BVDSS: >1000V TO263-7 T&R 0.8K Non-Stocked Lead-Time 40 Weeks
Reel
8,13 kr.
7,61 kr.
6,96 kr.
Min.: 800
Mult.: 800
: 800
SMD/SMT TO-263-7 1 Channel 1.7 kV 7.1 A 0.85 Ohms - 10 V, 25 V 4 V 15.7 nC - 55 C + 175 C 64.38 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200V, 22 mohm G2 Lead-Time 53 Weeks
122,12 kr.
93,03 kr.
77,51 kr.
69,01 kr.
64,53 kr.
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 80 A 22 mOhms - 10 V, + 25 V 5.1 V 71 nC - 55 C + 175 C 329 W Enhancement CoolSiC
Wolfspeed SiC MOSFETs SiC, MOSFET, 60mO, 650V, TO-263-7 T&R, Industrial Non-Stocked
Reel
29,47 kr.
Min.: 800
Mult.: 800
: 800
SMD/SMT TO-263-7 1 Channel 650 V 36 A 60 mOhms - 4 V, + 15 V 3.6 V 46 nC - 40 C + 175 C 136 W Enhancement


Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET Non-Stocked Lead-Time 52 Weeks
Reel
46,92 kr.
Min.: 1.000
Mult.: 1.000
: 1.000
SMD/SMT 1 Channel 650 V 63 A 42 mOhms - 5 V, + 23 V 5.7 V 49 nC - 55 C + 175 C 234 W Enhancement CoolSiC


Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET Non-Stocked Lead-Time 52 Weeks
Reel
39,54 kr.
Min.: 1.000
Mult.: 1.000
: 1.000
SMD/SMT 1 Channel 650 V 54 A 51 mOhms - 5 V, + 23 V 5.7 V 41 nC - 55 C + 175 C 211 W Enhancement CoolSiC


Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET Non-Stocked Lead-Time 52 Weeks
Reel
24,92 kr.
Min.: 1.000
Mult.: 1.000
: 1.000
SMD/SMT 1 Channel 650 V 28 A 111 mOhms - 5 V, + 23 V 5.7 V 44 nC - 55 C + 175 C 126 W Enhancement CoolSiC
GeneSiC Semiconductor SiC MOSFETs 1200V 40mohm TO-247-4 G3R SiC MOSFET Non-Stocked Lead-Time 26 Weeks
113,39 kr.
103,54 kr.
99,89 kr.
96,23 kr.
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 55 A 40 mOhms - 5 V, + 15 V 2.7 V 88 nC - 55 C + 175 C 228 W Enhancement