TBC8x7 Bipolar Junction Transistors

Toshiba TBC8x7 Bipolar Junction Transistors (BJTs) are available in both NPN and PNP polarities. These transistors are offered in a compact, surface-mount SOT23-3 package. Toshiba TBC8x7 BJTs feature a wide storage temperature (Tstg) range of -55°C to +150°C and a junction temperature (TJ)of +150°C. These transistors are ideal for use in low-frequency amplifiers and communication devices.

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Description Datasheet Availability Pricing (DKK) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging

Toshiba Bipolar Transistors - BJT BJT NPN 0.15A 50V
Datasheet
5.722In Stock
9.000Expected 19/10/2026
Cut Tape
1,16 kr.
0,694 kr.
0,433 kr.
0,313 kr.
Reel
0,216 kr.
View
MouseReel Available
Min.: 1
Mult.: 1
: 3.000
Si SMD/SMT SOT-23-3 NPN Single 150 mA 50 V 60 V 6 V 170 mV 320 mW 100 MHz + 150 C TBC8X7 Reel, Cut Tape, MouseReel

Toshiba Bipolar Transistors - BJT BJT PNP -0.15A -50V
Datasheet
17.846Expected 19/10/2026
Cut Tape
1,16 kr.
0,694 kr.
0,433 kr.
0,313 kr.
Reel
0,216 kr.
View
MouseReel Available
Min.: 1
Mult.: 1
: 3.000
Si SMD/SMT SOT-23-3 PNP Single 150 mA 50 V 50 V 5 V 220 mV 320 mW 80 MHz + 150 C TBC8X7 Reel, Cut Tape, MouseReel