CoolGaN™ Gen 2 650V Power Transistors

Infineon Technologies CoolGaN™ Gen 2 650V Power Transistors feature highly efficient GaN (gallium nitride) transistor technology for power conversion in a voltage range up to 650V. Infineon’s GaN technology brings the e‑mode concept to maturity with high volumes of end-to-end production. This pioneering quality ensures the highest standards and offers the most reliable performance. The enhancement mode CoolGaN™ Gen 2 650V power transistors improve system efficiency and power density with ultra-fast switching.

Results: 12
Select Image Part # Mfr. Description Datasheet Availability Pricing (DKK) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Technology
Infineon Technologies GaN FETs HV GAN DISCRETES 4.511In Stock
Cut Tape
24,99 kr.
16,41 kr.
11,49 kr.
9,40 kr.
9,03 kr.
Reel
7,98 kr.
Min.: 1
Mult.: 1
: 5.000
SMD/SMT HEMT 1 Channel 650 V 13 A 170 mOhms - 10 V 1.6 V 2.6 nC - 55 C + 150 C 46 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 4.815In Stock
Cut Tape
18,43 kr.
11,94 kr.
8,21 kr.
6,61 kr.
Reel
5,24 kr.
Min.: 1
Mult.: 1
: 5.000
SMD/SMT HEMT 1 Channel 650 V 9.2 A 240 mOhms - 10 V 1.6 V 1.8 nC - 55 C + 150 C 33 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 4.699In Stock
Cut Tape
16,04 kr.
10,29 kr.
7,06 kr.
5,62 kr.
Reel
4,37 kr.
Min.: 1
Mult.: 1
: 5.000
SMD/SMT HEMT 1 Channel 650 V 7.2 A 330 mOhms - 10 V 1.6 V 1.4 nC - 55 C + 150 C 28 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 1.661In Stock
1.800Expected 28/01/2027
Cut Tape
70,65 kr.
40,43 kr.
38,34 kr.
36,18 kr.
31,33 kr.
Reel
31,03 kr.
Min.: 1
Mult.: 1
: 1.800
SMD/SMT HEMT 1 Channel 650 V 42 mOhms - 10 V 1.6 V 11 nC - 55 C + 150 C Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 977In Stock
Cut Tape
54,98 kr.
29,91 kr.
27,45 kr.
27,01 kr.
23,57 kr.
Reel
22,90 kr.
Min.: 1
Mult.: 1
: 1.800
SMD/SMT HEMT 1 Channel 650 V 38 A 54 mOhms - 10 V 1.6 V 8.4 nC - 55 C + 150 C 125 W GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 1.262In Stock
Cut Tape
30,29 kr.
19,99 kr.
14,17 kr.
12,16 kr.
Reel
10,29 kr.
Min.: 1
Mult.: 1
: 1.800
SMD/SMT HEMT 1 Channel 650 V 15 A 140 mOhms - 10 V 1.6 V 3.4 nC - 40 C + 150 C Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 602In Stock
Cut Tape
85,49 kr.
57,37 kr.
53,12 kr.
46,03 kr.
Reel
40,13 kr.
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 61 A 30 mOhms - 10 V 1.6 V 16 nC - 55 C + 150 C 181 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 467In Stock
Cut Tape
70,80 kr.
39,39 kr.
37,60 kr.
31,93 kr.
Reel
31,93 kr.
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 42 mOhms - 10 V 1.6 V 11 nC - 55 C + 150 C 132 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 2.068In Stock
Cut Tape
56,62 kr.
30,88 kr.
27,68 kr.
Reel
24,47 kr.
23,87 kr.
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 54 mOhms - 10 V 1.6 V 8.4 nC - 55 C + 150 C 104 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 583In Stock
Cut Tape
47,30 kr.
25,36 kr.
23,20 kr.
18,72 kr.
Reel
18,72 kr.
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 66 mOhms - 10 V 1.6 V 6.6 nC - 55 C + 150 C 83 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES
9.060On Order
Cut Tape
81,61 kr.
46,25 kr.
45,58 kr.
45,13 kr.
38,72 kr.
Reel
38,72 kr.
Min.: 1
Mult.: 1
: 1.800
SMD/SMT HEMT 1 Channel 650 V 67 A 30 mOhms - 10 V 1.6 V 16 nC - 55 C + 150 C 219 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES
3.596Expected 19/11/2026
Cut Tape
46,10 kr.
27,30 kr.
23,57 kr.
21,63 kr.
18,58 kr.
Reel
18,58 kr.
Min.: 1
Mult.: 1
: 1.800
SMD/SMT HEMT 1 Channel 650 V 66 mOhms - 10 V 1.6 V 6.6 nC - 55 C + 150 C 104 W Enhancement GaN