IAUZ4xN06S5 60V Automotive OptiMOS™-5 MOSFETs

Infineon Technologies IAUZ4xN06S5 60V Automotive OptiMOS™-5 MOSFETs feature a low drain-source on-state resistance, a low gate charge, and a low gate capacitance, minimising conduction and switching losses. These N-channel, enhancement-mode  MOSFETs also feature an extremely low 22.7nC to 23.0nC reverse recovery charge. 

Results: 4
Select Image Part # Mfr. Description Datasheet Availability Pricing (DKK) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification Tradename Packaging
Infineon Technologies MOSFETs MOSFET_)40V 60V) 7.437In Stock
Min.: 1
Mult.: 1
: 5.000

Si SMD/SMT TDSON-8 N-Channel 1 Channel 60 V 41 A 10.2 mOhms 20 V 3.4 V 12.5 nC - 55 C + 175 C 42 W Enhancement AEC-Q101 OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs MOSFET_)40V 60V) 9.351In Stock
40.000On Order
Min.: 1
Mult.: 1
: 5.000

Si SMD/SMT TSDSON-8-33 N-Channel 1 Channel 60 V 40 A 5 mOhms 16 V 2.2 V 28 nC - 55 C + 175 C 71 W Enhancement AEC-Q101 OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs 60 V, N-Ch, 1.1 m max, Normal Level, Automotive MOSFET, SSO8 (5x6), OptiMOS-5
5.000Expected 08/10/2026
Min.: 1
Mult.: 1
: 5.000

Si SMD/SMT TDSON-8 N-Channel 1 Channel 60 V 310 A 1.12 mOhms 20 V 3.4 V 105 nC - 55 C + 175 C 188 W Enhancement AEC-Q101 OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs 60 V, N-Ch, 7.4 m max, Automotive MOSFET, SSO8 (5x6), OptiMOS 5
5.000Expected 08/10/2026
Min.: 1
Mult.: 1
: 5.000

Si SMD/SMT TDSON-8 N-Channel 1 Channel 60 V 60 A 7.4 mOhms 20 V 3.4 V 15.4 nC - 55 C + 175 C 52 W Enhancement AEC-Q101 OptiMOS Reel, Cut Tape