SIHx5N80AE Power MOSFETs

Vishay / Siliconix SIHx5N80AE Power MOSFETs feature a low figure-of-merit, low effective capacitance, and reduced switching and conduction losses. The Vishay / Siliconix SIHx5N80AE Power MOSFETs provide an 850V drain-source voltage and are ideal for server and telecom power supplies. Additionally, the SIHx5N80AE MOSFETs utilize an ultra-low gate charge and integrated Zener diode ESD protection.

Results: 3
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Description Datasheet Availability Pricing (DKK) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Packaging
Vishay / Siliconix MOSFETs N-CHANNEL 100 V
Datasheet
2.884In Stock
Cut Tape
11,86 kr.
5,65 kr.
5,04 kr.
3,98 kr.
Reel
3,49 kr.
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Min.: 1
Mult.: 1
: 3.000
Si Through Hole N-Channel 1 Channel 800 V 4.4 A 1.35 Ohms 30 V 4 V 11 nC - 55 C + 150 C 62.5 W Enhancement Reel, Cut Tape
Vishay / Siliconix MOSFETs TO220 800V 3A E SERIES
Datasheet
1.596In Stock
13,20 kr.
6,35 kr.
5,68 kr.
4,51 kr.
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Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 3 A 1.35 Ohms 30 V 4 V 11 nC - 55 C + 150 C 29 W Enhancement Tube
Vishay / Siliconix MOSFETs DPAK 800V 4.4A E SERIES
Datasheet
3.849In Stock
11,19 kr.
5,29 kr.
4,71 kr.
3,72 kr.
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Min.: 1
Mult.: 1
Si SMD/SMT TO-252-4 N-Channel 1 Channel 800 V 4.4 A 1.35 Ohms 30 V 4 V 11 nC - 55 C + 150 C 62.5 W Enhancement Tube