TRSx65H SiC Schottky Barrier Diodes

Toshiba TRSx65H Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs) are 650V devices based on third-generation technology utilizing Schottky metal. These components optimize the junction barrier Schottky (JBS) structure of the second-generation products, lowering the electric field at the Schottky interface and reducing leakage current, delivering enhanced efficiency. TRSx65H achieves a 17% lower forward voltage (1.2V typical) and improves trade-offs between the forward voltage and the total capacitive charge (17nC typical) than 2nd-Gen devices. With an enhanced forward voltage and reverse current ratio, a typical 1.1µA insulation resistance is achieved. Other features include forward DC current of up to 12A and square-wave non-repetitive surge currents of up to 640A.

Results: 12
Select Image Part #
 Mfr.
Description Datasheet Availability Pricing (DKK) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Packaging
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 8A DFN8x8
Datasheet
2.134In Stock
Cut Tape
21,78 kr.
11,12 kr.
9,85 kr.
8,50 kr.
Reel
7,38 kr.
View
Min.: 1
Mult.: 1
: 2.500
SMD/SMT DFN-8 8 A 650 V 1.2 V 410 A 2 uA Reel, Cut Tape
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 4A DFN8x8
Datasheet
6.771In Stock
Cut Tape
14,92 kr.
7,25 kr.
6,54 kr.
6,26 kr.
Reel
6,26 kr.
4,28 kr.
Min.: 1
Mult.: 1
: 2.500
SMD/SMT DFN-8 4 A 650 V 1.2 V 230 A 2 uA Reel, Cut Tape
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 6A DFN8x8
Datasheet
4.789In Stock
Cut Tape
17,68 kr.
8,73 kr.
7,83 kr.
7,18 kr.
Reel
7,18 kr.
5,39 kr.
Min.: 1
Mult.: 1
: 2.500
SMD/SMT DFN-8 6 A 650 V 1.2 V 310 A 2 uA Reel, Cut Tape
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 10A DFN8x8
Datasheet
1.933In Stock
Cut Tape
24,32 kr.
12,61 kr.
11,19 kr.
9,92 kr.
Reel
7,68 kr.
7,53 kr.
Min.: 1
Mult.: 1
: 2.500
SMD/SMT DFN-8 10 A 650 V 1.2 V 510 A 2 uA Reel, Cut Tape
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 4A TO-220-2L
Datasheet
208In Stock
15,29 kr.
7,45 kr.
7,18 kr.
5,17 kr.
Min.: 1
Mult.: 1
Through Hole TO-220-2L 4 A 650 V 1.2 V 230 A 2 uA Tube
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 3A TO-220-2L
Datasheet
1In Stock
16,26 kr.
6,54 kr.
5,83 kr.
4,63 kr.
Min.: 1
Mult.: 1
Through Hole TO-220-2L 3 A 650 V 1.2 V 170 A 2 uA Tube
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 12A TO-220-2L
Datasheet
213In Stock
24,47 kr.
14,85 kr.
11,12 kr.
9,03 kr.
Min.: 1
Mult.: 1
Through Hole TO-220-2L 12 A 650 V 1.2 V 640 A 2.4 uA Tube
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 12A DFN8x8
Datasheet
1.033In Stock
Cut Tape
26,04 kr.
14,32 kr.
12,23 kr.
11,26 kr.
Reel
8,95 kr.
8,58 kr.
Min.: 1
Mult.: 1
: 2.500
SMD/SMT DFN-8 12 A 650 V 1.2 V 640 A 2.4 uA Reel, Cut Tape
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 10A TO-220-2L
Datasheet
50In Stock
22,31 kr.
11,26 kr.
10,07 kr.
8,13 kr.
View
Min.: 1
Mult.: 1
Through Hole TO-220-2L 10 A 650 V 1.2 V 510 A 2 uA Tube
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 6A TO-220-2L
Datasheet
127In Stock
17,68 kr.
8,65 kr.
8,58 kr.
6,24 kr.
Min.: 1
Mult.: 1
Through Hole TO-220-2L 6 A 650 V 1.2 V 310 A 2 uA Tube
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 8A TO-220-2L
Datasheet
21In Stock
21,26 kr.
10,52 kr.
9,40 kr.
7,61 kr.
Min.: 1
Mult.: 1
Through Hole TO-220-2L 8 A 650 V 1.2 V 410 A 2 uA Tube
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 2A TO-220-2L
Datasheet
172On Order
12,16 kr.
5,78 kr.
5,15 kr.
4,07 kr.
Min.: 1
Mult.: 1
Through Hole TO-220-2L 2 A 650 V 1.2 V 120 A 2 uA Tube