MXP120 MaxSiC™ 1200V N-Channel MOSFETs

Vishay Semiconductors MXP120 MaxSiC™ 1200V N-Channel MOSFETs feature 1200V drain-source voltage, fast switching speed, and 3μs short circuit withstand time. These MOSFETs also feature maximum power dissipation of 56W to 288W (Tc = 25°C) and continuous drain current of 10.5A to 53A (Tc = 25°C). The MXP120 MaxSiC™ 1200V N-Channel MOSFETs are halogen-free and are available in TO-247AD 3L, TO-247AD 4L, and TO-263 7L packages. These MOSFETs are used in chargers, auxiliary motor drives, and DC-DC converters.

Results: 17
Select Image Part # Mfr. Description Datasheet Availability Pricing (DKK) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode
Vishay Semiconductors SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET 800In Stock
78,48 kr.
56,77 kr.
47,30 kr.
43,42 kr.
Min.: 1
Mult.: 1
SMD/SMT TO-263-7 1 Channel 1.2 kV 52 A 56 mOhms - 10 V, 22 V 2.8 V 82 nC - 55 C + 175 C 268 W Enhancement
Vishay Semiconductors SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
600Expected 25/11/2026
82,73 kr.
60,50 kr.
52,52 kr.
45,58 kr.
Min.: 1
Mult.: 1
Through Hole TO-247AD-4 1 Channel 1.2 kV 51 A 56 mOhms - 10 V, 22 V 2.8 V 83 nC - 55 C + 175 C 254 W Enhancement
Vishay Semiconductors SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
600Expected 25/11/2026
81,99 kr.
59,90 kr.
52,07 kr.
45,13 kr.
44,31 kr.
Min.: 1
Mult.: 1
Through Hole TO-247AD-3 1 Channel 1.2 kV 51 A 56 mOhms - 10 V, 22 V 2.8 V 84 nC - 55 C + 175 C 254 W Enhancement
Vishay Semiconductors SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
799Expected 14/04/2027
65,42 kr.
46,25 kr.
38,49 kr.
34,32 kr.
Min.: 1
Mult.: 1
SMD/SMT TO-263-7 1 Channel 1.2 kV 41 A 79 mOhms - 10 V, 22 V 2.9 V 58 nC - 55 C + 175 C 221 W Enhancement
Vishay Semiconductors SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
599Expected 14/04/2027
70,94 kr.
45,43 kr.
39,46 kr.
35,51 kr.
Min.: 1
Mult.: 1
Through Hole TO-247AD-4 1 Channel 1.2 kV 39 A 79 mOhms - 10 V, 22 V 2.9 V 61 nC - 55 C + 175 C 205 W Enhancement
Vishay Semiconductors SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
799Expected 14/04/2027
59,61 kr.
40,73 kr.
33,57 kr.
29,91 kr.
Min.: 1
Mult.: 1
SMD/SMT TO-263-7 1 Channel 1.2 kV 32 A 100 mOhms - 10 V, 22 V 2.9 V 47 nC - 55 C + 175 C 185 W Enhancement
Vishay Semiconductors SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
583Expected 14/04/2027
65,05 kr.
40,66 kr.
35,06 kr.
31,33 kr.
Min.: 1
Mult.: 1
Through Hole TO-247AD-4 1 Channel 1.2 kV 31 A 100 mOhms - 10 V, 22 V 2.9 V 45 nC - 55 C + 175 C 174 W Enhancement
Vishay / Siliconix SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
600Expected 14/04/2027
68,93 kr.
38,27 kr.
35,36 kr.
30,81 kr.
Min.: 1
Mult.: 1
Through Hole TO-247AD-4L 1 Channel 1.2 kV 18 A 200 mOhms - 10 V, + 22 V 3.1 V 25 nC - 55 C + 175 C 109 W Enhancement
Vishay / Siliconix SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
800Expected 14/04/2027
Cut Tape
54,31 kr.
29,47 kr.
27,08 kr.
22,53 kr.
Reel
22,53 kr.
Min.: 1
Mult.: 1
: 800
SMD/SMT TO-263-7L 1 Channel 1.2 kV 12 A 313 mOhms - 10 V, + 22 V 3 V 15 nC - 55 C + 175 C 85 W Enhancement
Vishay / Siliconix SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
600Expected 14/04/2027
101,75 kr.
58,78 kr.
54,68 kr.
51,32 kr.
Min.: 1
Mult.: 1
Through Hole TO-247AD-3L 1 Channel 1.2 kV 53 A 54 mOhms - 10 V, + 22 V 2.9 V 69 nC - 55 C + 175 C 288 W Enhancement
Vishay Semiconductors SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
800Expected 02/12/2026
79,97 kr.
59,53 kr.
49,61 kr.
44,24 kr.
Min.: 1
Mult.: 1
SMD/SMT TO-263-7 1 Channel 1.2 kV 52 A 56 mOhms - 10 V, 22 V 2.8 V 82 nC - 55 C + 175 C 268 W Enhancement
Vishay Semiconductors SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
600Expected 07/12/2026
85,42 kr.
62,74 kr.
54,76 kr.
47,37 kr.
46,55 kr.
Min.: 1
Mult.: 1
Through Hole TO-247AD-4 1 Channel 1.2 kV 51 A 56 mOhms - 10 V, 22 V 2.8 V 83 nC - 55 C + 175 C 254 W Enhancement
Vishay / Siliconix SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
800Expected 09/12/2026
Cut Tape
73,56 kr.
41,10 kr.
39,61 kr.
33,64 kr.
Reel
33,64 kr.
Min.: 1
Mult.: 1
: 800
SMD/SMT TO-263-7L 1 Channel 1.2 kV 41 A 79 mOhms - 10 V, + 22 V 2.9 V 58 nC - 55 C + 175 C 221 W Enhancement
Vishay Semiconductors SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
600Expected 07/12/2026
73,18 kr.
47,52 kr.
41,33 kr.
37,23 kr.
Min.: 1
Mult.: 1
Through Hole TO-247AD-4 1 Channel 1.2 kV 39 A 79 mOhms - 10 V, 22 V 2.9 V 61 nC - 55 C + 175 C 205 W Enhancement
Vishay / Siliconix SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
800Expected 02/12/2026
Cut Tape
67,44 kr.
37,37 kr.
35,36 kr.
30,06 kr.
Reel
30,06 kr.
Min.: 1
Mult.: 1
: 800
SMD/SMT TO-263-7L 1 Channel 1.2 kV 32 A 100 mOhms - 10 V, + 22 V 2.9 V 47 nC - 55 C + 175 C 185 W Enhancement
Vishay Semiconductors SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
600Expected 09/12/2026
66,62 kr.
42,37 kr.
36,78 kr.
32,45 kr.
Min.: 1
Mult.: 1
Through Hole TO-247AD-4 1 Channel 1.2 kV 39 A 79 mOhms - 10 V, 22 V 2.9 V 61 nC - 55 C + 175 C 205 W Enhancement
Vishay / Siliconix SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
600Expected 14/04/2027
105,71 kr.
61,25 kr.
57,07 kr.
53,94 kr.
Min.: 1
Mult.: 1
Through Hole TO-247AD-3L 1 Channel 1.2 kV 53 A 54 mOhms - 10 V, + 22 V 2.9 V 69 nC - 55 C + 175 C 288 W Enhancement