CoolMOS™ 7 Superjunction MOSFETs

Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs are optimized for energy efficiency, power density, and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, adapters and chargers can be made smaller, lighter, and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

Results: 188
Select Image Part # Mfr. Description Datasheet Availability Pricing (DKK) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename Packaging
Infineon Technologies MOSFETs N-Ch 700V 46A TO247-4 Lead-Time 8 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 46 A 40 mOhms 20 V 3 V 93 nC - 55 C + 150 C 227 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER_NEW Non-Stocked Lead-Time 8 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 33 A 58 mOhms 20 V 3 V 64 nC - 55 C + 150 C 171 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER_NEW Non-Stocked Lead-Time 8 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 37 A 69 mOhms 20 V 3 V 51 nC - 55 C + 150 C 129 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER NEW Non-Stocked Lead-Time 8 Weeks
Min.: 2.000
Mult.: 2.000
: 2.000

Si SMD/SMT HSOF-8 N-Channel 1 Channel 600 V 20 A 108 mOhms 20 V 3 V 27 nC - 55 C + 150 C 120 W Enhancement Reel

Infineon Technologies MOSFETs HIGH POWER_NEW Non-Stocked Lead-Time 8 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 14 A 144 mOhms 20 V 3.5 V 28 nC - 55 C + 150 C 75 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs LOW POWER_NEW Non-Stocked Lead-Time 15 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 13 A 310 mOhms 30 V 2.5 V 30 nC - 55 C + 150 C 30 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER_NEW Non-Stocked Lead-Time 39 Weeks
Min.: 3.000
Mult.: 3.000
: 3.000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 17 A 125 mOhms 20 V 3 V 34 nC - 40 C + 150 C 103 W Enhancement CoolMOS Reel
Infineon Technologies MOSFETs HIGH POWER BEST IN CLASS Non-Stocked Lead-Time 39 Weeks
Min.: 3.000
Mult.: 3.000
: 3.000

Si SMD/SMT VSON-4 N-Channel 1 Channel 650 V 21 A 88 mOhms 20 V 3 V 45 nC - 40 C + 150 C 128 W Enhancement CoolMOS Reel
Infineon Technologies MOSFETs HIGH POWER BEST IN CLASS Non-Stocked Lead-Time 39 Weeks
Min.: 1
Mult.: 1
: 3.000

Si SMD/SMT VSON-4 N-Channel 1 Channel 650 V 21 A 99 mOhms 20 V 3 V 45 nC - 40 C + 150 C 128 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs HIGH POWER_NEW Non-Stocked Lead-Time 18 Weeks
Min.: 500
Mult.: 500

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 33 A 65 mOhms 20 V 3 V 64 nC - 55 C + 150 C 171 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs LOW POWER_NEW Non-Stocked Lead-Time 19 Weeks
Min.: 1.500
Mult.: 1.500

Si Through Hole TO-251-3 N-Channel 1 Channel 800 V 8 A 510 mOhms 20 V 2.5 V 20 nC - 55 C + 150 C 60 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER_NEW Non-Stocked Lead-Time 12 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 18 A 111 mOhms 20 V 3 V 35 nC - 55 C + 150 C 101 W Enhancement CoolMOS Tube

Infineon Technologies MOSFETs LOW POWER_NEW Non-Stocked Lead-Time 18 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 13 A 310 mOhms 20 V 2.5 V 30 nC - 55 C + 150 C 84 W Enhancement CoolMOS Tube