Power MOSFETs

YAGEO XSemi Power MOSFETs use advanced processing techniques for low on-resistance, efficiency, and cost-effectiveness. YAGEO XSemi Power MOSFETs are available in different packages to fit application needs. Packages available for the device are widely used for commercial and industrial applications.

Results: 79
Select Image Part # Mfr. Description Datasheet Availability Pricing (DKK) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Packaging
YAGEO XSemi MOSFETs N-CH 100V 8.1 A TO-252
2.000Expected 02/03/2027
Cut Tape
4,17 kr.
1,87 kr.
1,64 kr.
1,56 kr.
Reel
0,94 kr.
Min.: 1
Mult.: 1
: 3.000
Si SMD/SMT TO-252-3/2 N-Channel 1 Channel 100 V 8.1 A 135 mOhms 20 V 3 V 11 nC - 55 C + 150 C 2 W Enhancement Reel, Cut Tape, MouseReel
YAGEO XSemi MOSFETs P-CH -30V -9. 3A SO-8
5.975Expected 06/04/2027
Cut Tape
3,66 kr.
1,63 kr.
1,42 kr.
1,07 kr.
Reel
0,806 kr.
Min.: 1
Mult.: 1
: 3.000
Si SMD/SMT SO-8 P-Channel 1 Channel 30 V 9.3 A 20 mOhms 20 V 3 V 12 nC - 55 C + 150 C 2.5 W Enhancement Reel, Cut Tape, MouseReel
YAGEO XSemi MOSFETs P-CH -30V -3. 9A SOT-23S
2.955Expected 05/01/2027
Cut Tape
2,25 kr.
0,977 kr.
0,85 kr.
0,627 kr.
Reel
0,433 kr.
Min.: 1
Mult.: 1
: 3.000
Si SMD/SMT SOT-23S-3 P-Channel 1 Channel 30 V 3.9 A 55 mOhms 20 V 3 V 6.5 nC - 55 C + 150 C 1.25 W Enhancement Reel, Cut Tape, MouseReel
YAGEO XSemi MOSFETs N-CH 600V 0.0 53A SOT-23
5.993Expected 03/03/2027
Cut Tape
2,89 kr.
1,28 kr.
1,12 kr.
0,836 kr.
Reel
0,619 kr.
0,53 kr.
Min.: 1
Mult.: 1
: 3.000
Si SMD/SMT SOT-23-3 N-Channel 1 Channel 600 V 53 mA 72 Ohms 20 V 2.6 V 2.3 nC - 55 C + 150 C 500 mW Enhancement Reel, Cut Tape, MouseReel