SCT3x 3rd Generation SiC Trench MOSFETs

ROHM Semiconductor SCT3x series SiC Trench MOSFETs utilize a proprietary trench gate structure that reduces ON resistance by 50% and input capacitance by 35% compared with planar-type SiC MOSFETs. This design results in significantly lower switching loss and faster switching speeds, improving operational efficiency while reducing power loss in a variety of equipment. ROHM Semiconductor SCT3x includes 650V and 1200V variants for broad applicability.

Results: 31
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 Mfr.
Description Datasheet Availability Pricing (DKK) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Qualification
ROHM Semiconductor SiC MOSFETs N-Ch 650V SiC 21A 120mOhm TrenchMOS
Datasheet
411In Stock
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 21 A 156 mOhms - 4 V, + 22 V 5.6 V 38 nC + 175 C 103 W Enhancement
ROHM Semiconductor SiC MOSFETs Nch 1200V 95A SiC TO-247N
Datasheet
5In Stock
450Expected 08/09/2026
Min.: 1
Mult.: 1

Through Hole TO-247N-3 1 Channel 1.2 kV 95 A 28.6 mOhms - 4 V, + 22 V 5.6 V 178 nC - 55 C + 175 C 427 W Enhancement
ROHM Semiconductor SiC MOSFETs N-Ch 650V 30A Silicon Carbide SiC
Datasheet
139In Stock
120Expected 26/08/2026
Min.: 1
Mult.: 1

Through Hole TO-247N-3 1 Channel 650 V 30 A 104 mOhms - 4 V, + 22 V 5.6 V 48 nC + 175 C 134 W Enhancement
ROHM Semiconductor SiC MOSFETs N-Ch 1200V SiC 17A 160mOhm TrenchMOS
Datasheet
4.934On Order
Min.: 1
Mult.: 1

Through Hole TO-247-3 1 Channel 1.2 kV 17 A 208 mOhms - 4 V, + 22 V 5.6 V 42 nC + 175 C 103 W Enhancement
ROHM Semiconductor SiC MOSFETs N-Ch 650V SiC 39A 60mOhm TrenchMOS
Datasheet
1.291Expected 05/10/2026
Min.: 1
Mult.: 1

Through Hole TO-247-3 1 Channel 650 V 39 A 78 mOhms - 4 V, + 22 V 5.6 V 58 nC + 175 C 165 W Enhancement
ROHM Semiconductor SiC MOSFETs 650V 93A 339W SIC 22mOhm TO-247N
Datasheet
Product Comments
Non-Stocked Lead-Time 27 Weeks
Min.: 450
Mult.: 450

Through Hole TO-247-3 1 Channel 650 V 93 A 28.6 mOhms - 4 V, + 22 V 5.6 V 133 nC - 55 C + 175 C 339 W Enhancement AEC-Q101