UG4SC 750V 8.4mΩ Combo-FETs

onsemi UG4SC 750V 8.4mΩ Combo-FETs combine a 750V SiC JFET and a low-voltage Si MOSFET in a single TO-247-4L package. This design enables a normally off switch while benefiting from the ultra-low on-resistance [RDS(on)] and robustness of a normally on SiC JFET. The UG4SC Combo-FET series from onsemi is ideal for high-energy switching in circuit protection. For switch-mode power conversion, the devices offer separate gate access to the JFET and MOSFET, enhancing speed control and simplifying the paralleling of multiple devices.

Results: 4
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Description Datasheet Availability Pricing (DKK) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Configuration
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Drain-Source Current at Vgs=0
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
onsemi JFETs UG4SC075005L8S
Datasheet
2.821In Stock
Cut Tape
354,28 kr.
295,12 kr.
255,95 kr.
255,80 kr.
Reel
248,72 kr.
Min.: 1
Mult.: 1
: 2.000
SiC SMD/SMT MO-229-8 N-Channel Single 750 V - 30 V to 30 V 6 uA 120 A 5 mOhms 1.153 kW - 55 C + 175 C UG4S Reel, Cut Tape
onsemi JFETs 750V/9MOCOMBO-FETG4TO247-4
Datasheet
535In Stock
144,57 kr.
88,48 kr.
Min.: 1
Mult.: 1
SiC Through Hole TO-247-4 N-Channel Single 750 V - 30 V to 30 V 4 uA 106 A 8.4 mOhms 375 W - 55 C + 175 C UG4S Tube
onsemi JFETs 750V/6MOCOMBO-FETG4TO247-4
Datasheet
159In Stock
225,74 kr.
155,39 kr.
Min.: 1
Mult.: 1
SiC Through Hole TO-247-4 N-Channel Single 750 V - 30 V to 30 V 6 uA 120 A 5.3 mOhms 714 W - 55 C + 175 C UG4S Tube
onsemi JFETs 750V/11MOCOMBO-FETG4TO247-4
Datasheet
549In Stock
189,93 kr.
125,10 kr.
Min.: 1
Mult.: 1
SiC Through Hole TO-247-4 N-Channel Single 750 V - 30 V to 30 V 3.5 uA 104 A 10 mOhms 357 W - 55 C + 175 C UG4S Tube