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Select	Image	Part #	Mfr.	Description	Datasheet	Availability	Pricing (DKK) Filter the results in the table by unit price based on your quantity.	Qty.	RoHS
	GaN FETs 18 V, 151 A enhancement-mode eGaN power transistor with 0.28 mOhm typ RDS(on). EPC EPC2370 EPC2370 EPC 1: 47,89 kr. Non-Stocked New Product	Mfr. Part No. EPC2370 Mouser Part No 65-EPC2370-ES New Product	EPC	GaN FETs 18 V, 151 A enhancement-mode eGaN power transistor with 0.28 mOhm typ RDS(on).	Datasheet	Non-Stocked	47,89 kr. 31,33 kr. 23,05 kr. 20,44 kr. View 18,13 kr. 17,23 kr. 16,49 kr.	Min.: 1 Mult.: 1
	GaN FETs 25 V GaN power transistor, 88 A, 0.65 mOhm typ RDS(on), designed for synchronous rectification and POL buck converters. EPC EPC2371 EPC2371 EPC 1: 37,75 kr. Non-Stocked New Product	Mfr. Part No. EPC2371 Mouser Part No 65-EPC2371-ES New Product	EPC	GaN FETs 25 V GaN power transistor, 88 A, 0.65 mOhm typ RDS(on), designed for synchronous rectification and POL buck converters.	Datasheet	Non-Stocked	37,75 kr. 24,69 kr. 18,43 kr. 15,37 kr. View 14,32 kr. 13,35 kr. 12,23 kr.	Min.: 1 Mult.: 1
	GaN FETs 25 V enhancement-mode eGaN power transistor for high-frequency DC-DC conversion and synchronous rectification. EPC EPC2372 EPC2372 EPC 3.000: 18,13 kr. Non-Stocked New Product	Mfr. Part No. EPC2372 Mouser Part No 65-EPC2372-ES New Product	EPC	GaN FETs 25 V enhancement-mode eGaN power transistor for high-frequency DC-DC conversion and synchronous rectification.		Non-Stocked	18,13 kr.	Min.: 3.000 Mult.: 1
	GaN FETs 18 V enhancement-mode eGaN power transistor, 88 A, 0.5 mOhm typ RDS(on), optimized for servers and AI power systems. EPC EPC2373 EPC2373 EPC 1: 34,39 kr. Non-Stocked New Product	Mfr. Part No. EPC2373 Mouser Part No 65-EPC2373-ES New Product	EPC	GaN FETs 18 V enhancement-mode eGaN power transistor, 88 A, 0.5 mOhm typ RDS(on), optimized for servers and AI power systems.	Datasheet	Non-Stocked	34,39 kr. 22,53 kr. 16,71 kr. 14,02 kr. View 13,06 kr. 12,16 kr. 11,04 kr.	Min.: 1 Mult.: 1
	GaN FETs Enhancement-mode eGaN power transistor for high-efficiency DC-DC conversion and synchronous rectification. EPC EPC2374 EPC2374 EPC 3.000: 19,99 kr. Non-Stocked New Product	Mfr. Part No. EPC2374 Mouser Part No 65-EPC2374-ES New Product	EPC	GaN FETs Enhancement-mode eGaN power transistor for high-efficiency DC-DC conversion and synchronous rectification.	Datasheet	Non-Stocked	19,99 kr.	Min.: 3.000 Mult.: 1
	GaN FETs Enhancement-mode eGaN power transistor for high-frequency power conversion applications. EPC EPC2375 EPC2375 EPC 1: 42,60 kr. Non-Stocked New Product	Mfr. Part No. EPC2375 Mouser Part No 65-EPC2375 New Product	EPC	GaN FETs Enhancement-mode eGaN power transistor for high-frequency power conversion applications.	Datasheet	Non-Stocked	42,60 kr. 27,90 kr. 20,52 kr. 18,20 kr. View 16,11 kr. 15,37 kr. 14,77 kr.	Min.: 1 Mult.: 1
	GaN FETs Enhancement-mode eGaN power transistor for high-current, high-frequency DC-DC conversion and synchronous rectification. EPC EPC2376 EPC2376 EPC 3.000: 34,32 kr. Non-Stocked New Product	Mfr. Part No. EPC2376 Mouser Part No 65-EPC2376 New Product	EPC	GaN FETs Enhancement-mode eGaN power transistor for high-current, high-frequency DC-DC conversion and synchronous rectification.	Datasheet	Non-Stocked	34,32 kr.	Min.: 3.000 Mult.: 1
	GaN FETs 40 V, 101 A enhancement-mode eGaN power transistor with 0.5 mOhm typ RDS(on), optimized for 48 V-to-12 V LLC converter synchronous rectification. EPC EPC2377 EPC2377 EPC 1: 43,34 kr. Non-Stocked New Product	Mfr. Part No. EPC2377 Mouser Part No 65-EPC2377 New Product	EPC	GaN FETs 40 V, 101 A enhancement-mode eGaN power transistor with 0.5 mOhm typ RDS(on), optimized for 48 V-to-12 V LLC converter synchronous rectification.	Datasheet	Non-Stocked	43,34 kr. 29,02 kr. 23,28 kr. 20,74 kr. 16,71 kr.	Min.: 1 Mult.: 1
	GaN FETs 25 V, 101 A GaN power transistor with 0.41 mOhm typ RDS(on), optimized for high-performance DC-DC conversion and synchronous rectification. EPC EPC2378 EPC2378 EPC 1: 43,34 kr. Non-Stocked New Product	Mfr. Part No. EPC2378 Mouser Part No 65-EPC2378 New Product	EPC	GaN FETs 25 V, 101 A GaN power transistor with 0.41 mOhm typ RDS(on), optimized for high-performance DC-DC conversion and synchronous rectification.	Datasheet	Non-Stocked	43,34 kr. 29,02 kr. 23,28 kr. 20,74 kr. 16,71 kr.	Min.: 1 Mult.: 1