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STDRIVEG212QTR

Name: STMicroelectronics STDRIVEG212QTR
Brand: STMicroelectronics
SKU: 511-STDRIVEG212QTR
Price: 24.77 DKK
Availability: InStock

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Mouser No:

511-STDRIVEG212QTR

Mfr. No:

STDRIVEG212QTR

Mfr.:

STMicroelectronics

Description:

Gate Drivers High voltage and high-speed half-bridge gate driver for GaN power switches

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Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

STDRIVEG212QTR Datasheet (PDF)

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Learn more about STMicroelectronics STDRIVEG212QTR

In Stock: 613

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	24,77 kr.	24,77 kr.
	16,41 kr.	164,10 kr.
	14,92 kr.	373,00 kr.
	12,68 kr.	1.268,00 kr.
	12,09 kr.	3.022,50 kr.
	10,82 kr.	5.410,00 kr.
	10,15 kr.	10.150,00 kr.
Full Reel (Order in multiples of 3000)
	8,50 kr.	25.500,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	Gate Drivers
Product:	Gate Driver
Type:	Half-Bridge
Mounting Style:	SMD/SMT
Package/Case:	QFN-18
Number of Drivers:	2 Driver
Number of Outputs:	3 Output
Output Current:	1.8 A
Supply Voltage - Min:	10.3 V
Supply Voltage - Max:	18 V
Configuration:	Inverting, Non-Inverting
Rise Time:	22 ns
Fall Time:	13 ns
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Packaging:	Reel
Packaging:	Cut Tape
Brand:	STMicroelectronics
Development Kit:	EVLSTDRIVEG212
Maximum Turn-Off Delay Time:	65 ns
Maximum Turn-On Delay Time:	65 ns
Moisture Sensitive:	Yes
Operating Supply Current:	900 uA
Output Voltage:	220 V
Product Type:	Gate Drivers
Propagation Delay - Max:	65 ns
Rds On - Drain-Source Resistance:	4.8 Ohms
Shutdown:	Shutdown
Factory Pack Quantity:	3000
Subcategory:	PMIC - Power Management ICs
Technology:	GaN
Tradename:	STDRIVE

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Datasheet

STDRIVEG212QTR Datasheet (PDF)

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USHTS:: 8542390090
MXHTS:: 8542399999
ECCN:: EAR99

STDRIVEG212 220V Half-Bridge Gate Driver

STMicroelectronics STDRIVEG212 220V High-Speed Half-Bridge Gate Driver is optimized for 5V driving enhanced-mode GaN HEMTs. The high-side driver section is designed to support a voltage rail of up to 220V and can be easily supplied by the integrated bootstrap diode. High-current capability, short propagation delay with excellent delay matching, and integrated LDOs make the STDRIVEG212 optimized for driving high-speed GaN.