BFR 460L3 E6327

Infineon Technologies
726-BFR460L3E6327
BFR 460L3 E6327

Mfr.:

Description:
RF Bipolar Transistors NPN Silicn RF TRNSTR 4.5V 50mA

Datasheet:
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Learn more about Infineon Technologies BFR 460L3 E6327

In Stock: 21.069

Stock:
21.069 Can Dispatch Immediately
Factory Lead Time:
15 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 15000)

Pricing (DKK)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
3,33 kr. 3,33 kr.
2,12 kr. 21,20 kr.
1,70 kr. 170,00 kr.
1,63 kr. 815,00 kr.
1,56 kr. 1.560,00 kr.
1,49 kr. 3.725,00 kr.
1,45 kr. 7.250,00 kr.
1,39 kr. 13.900,00 kr.
Full Reel (Order in multiples of 15000)
1,34 kr. 20.100,00 kr.
† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: RF Bipolar Transistors
RoHS:  
BFR460L3
Bipolar
Si
NPN
22 GHz
4.5 V
1.5 V
- 65 C
+ 150 C
Single
SMD/SMT
TSLP
Reel
Cut Tape
MouseReel
Brand: Infineon Technologies
Maximum DC Collector Current: 50 mA
Pd - Power Dissipation: 200 mW
Product Type: RF Bipolar Transistors
Factory Pack Quantity: 15000
Subcategory: Transistors
Part # Aliases: SP000014238 BFR46L3E6327XT BFR460L3E6327XTMA1
Unit Weight: 0,540 mg
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Datasheet

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TARIC:
8541290000
CNHTS:
8541210000
CAHTS:
8541290000
USHTS:
8541210075
JPHTS:
8541290100
KRHTS:
8541219000
MXHTS:
85412999
ECCN:
EAR99

RF Transistors

Infineon RF Transistors include Low Noise Amplifiers and High Linearity Transistors. Devices in the Low Noise category are based on silicon bipolar technology. Moderate transition frequency of fT <20 GHz provides ease of use and stability. Breakdown voltage can safely support supply voltage of 5V. These transistors are suitable for use with AM over VHF/UHF up to 14GHz. High Linearity Transistors provide OIP3 (Output 3rd Order Intercept Point) above 29dBm. They are based on Infineon's high volume silicon bipolar and SiGe:C technologies for best in class noise figures. These devices are ideal for drivers, pre-amplifiers, and buffer amplifiers.

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