TO-263 MOSFETs

Results: 9
Select Image Part # Mfr. Description Datasheet Availability Pricing (DKK) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename Packaging
Vishay MOSFETs N-CHANNEL 650V 247In Stock
Min.: 1
Mult.: 1

Si SMD/SMT TO-263 N-Channel 1 Channel 650 V 20 A 190 mOhms - 30 V, 30 V 5 V 33 nC - 55 C + 150 C 179 W Enhancement Vishay
Infineon Technologies MOSFETs HIGH POWER_NEW 1.270In Stock
Min.: 1
Mult.: 1
: 1.000

Si SMD/SMT TO-263 N-Channel 1 Channel 650 V 13 A 404 mOhms - 20 V, 20 V 3.5 V 23 nC - 55 C + 150 C 72 W Enhancement Reel, Cut Tape, MouseReel
Vishay MOSFETs TO263 100V 150A N-CH MOSFET 1.341In Stock
Min.: 1
Mult.: 1

Si SMD/SMT TO-263 N-Channel 1 Channel 100 V 150 A 4 mOhms - 10 V, 10 V 4 V 84 nC - 55 C + 175 C 278 W
Infineon Technologies MOSFETs 40V 195A 1.8mOhm 150nC StrongIRFET 3.714In Stock
Min.: 1
Mult.: 1
: 800

Si SMD/SMT TO-263 N-Channel 1 Channel 40 V 250 A 1.8 mOhms - 20 V, 20 V 3.9 V 225 nC - 55 C + 175 C 230 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs HIGH POWER_LEGACY 1.750In Stock
Min.: 1
Mult.: 1
: 1.000

Si SMD/SMT TO-263 N-Channel 1 Channel 650 V 22.4 A 351 mOhms - 20 V, 20 V 4 V 86 nC - 55 C + 150 C 195.3 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFETs MOSFT 60V 270A 2.5mOhm 200nC Qg 428In Stock
800On Order
Min.: 1
Mult.: 1
: 800

Si SMD/SMT TO-263 N-Channel 1 Channel 60 V 270 A 2 mOhms - 20 V, 20 V 4 V 200 nC - 55 C + 175 C 375 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs HIGH POWER_LEGACY Non-Stocked Lead-Time 8 Weeks
Min.: 1
Mult.: 1
: 1.000

Si SMD/SMT TO-263 N-Channel 1 Channel 650 V 17.5 A 445 mOhms - 20 V, 20 V 4 V 68 nC - 55 C + 150 C 151 W Enhancement Reel, Cut Tape
Vishay MOSFETs N-CHANNEL 800V Non-Stocked
Min.: 1
Mult.: 1
Si SMD/SMT TO-263 N-Channel 1 Channel 800 V 5 A 826 mOhms - 10 V, 10 V 2 V 22.5 nC - 55 C + 150 C 78 W Enhancement
Infineon Technologies MOSFETs LOW POWER_LEGACY Non-Stocked Lead-Time 19 Weeks
Min.: 1
Mult.: 1
: 1.000

Si SMD/SMT TO-263 N-Channel 1 Channel 650 V 11.4 A 730 mOhms - 20 V, 20 V 4 V 41 nC - 55 C + 150 C 104.2 W Enhancement Reel, Cut Tape