TKx Silicon N-Channel MOSFETs

Toshiba TKx Silicon N-Channel MOSFETs are available in U-MOSX-H and DTMOSVI types and offer exceptional performance characteristics. These MOSFETs are designed with fast reverse recovery times that enhance efficiency in high-speed switching applications by reducing the delay between the turn-off and turn-on states. The low drain-source on-resistance [RDS(on)] contributes to minimal power losses and improved thermal management, making them ideal for applications requiring high current handling with low energy dissipation.

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Description Datasheet Availability Pricing (DKK) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Packaging
Toshiba MOSFETs N-ch MOSFET, 600 V, 0.08 ohma.10V, TO-220SIS, DTMOS?
Datasheet
116In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220SIS-3 N-Channel 1 Channel 600 V 30 A 80 mOhms 30 V 4 V 43 nC + 150 C 45 W Enhancement Tube
Toshiba MOSFETs N-ch MOSFET, 600 V, 0.155 ohma.10V, TOLL, DTMOS?
Datasheet
1.997In Stock
Min.: 1
Mult.: 1
Reel: 2.000

Si SMD/SMT TOLL-9 N-Channel 1 Channel 600 V 17 A 155 mOhms 30 V 4 V 24 nC + 150 C 130 W Enhancement Reel, Cut Tape
Toshiba MOSFETs 600V Silicon N-Channel MOS (DTMOS) MOSFET
Datasheet
1.998In Stock
Min.: 1
Mult.: 1
Reel: 2.000

Si SMD/SMT TOLL-9 N-Channel 1 Channel 600 V 30 A 80 mOhms 30 V 4 V 43 nC + 150 C 211 W Enhancement Reel, Cut Tape
Toshiba MOSFETs N-ch MOSFET, 650 V, 0.095 O@10V, TOLL, DTMOS?
Datasheet
2.000In Stock
Min.: 1
Mult.: 1
Reel: 2.000

Si SMD/SMT TOLL-9 N-Channel 1 Channel 650 V 29 A 95 mOhms 30 V 4.5 V 50 nC + 150 C 230 W Enhancement Reel, Cut Tape
Toshiba MOSFETs N-ch MOSFET, 600 V, 0.099 O@10V, TOLL, DTMOS?
Datasheet
2.000In Stock
Min.: 1
Mult.: 1
Reel: 2.000

Si SMD/SMT TOLL-9 N-Channel 1 Channel 600 V 25 A 99 mOhms 30 V 4 V 36 nC + 150 C 176 W Enhancement Reel, Cut Tape
Toshiba MOSFETs N-ch MOSFET, 650 V, 0.115 O@10V, TOLL, DTMOS?
Datasheet
2.000In Stock
Min.: 1
Mult.: 1
Reel: 2.000

Si SMD/SMT TOLL-9 N-Channel 1 Channel 650 V 24 A 115 mOhms 30 V 4.5 V 42 nC + 150 C 190 W Enhancement Reel, Cut Tape
Toshiba MOSFETs N-ch MOSFET, 600 V, 0.125 ohma.10V, TOLL, DTMOS?
Datasheet
1.996In Stock
Min.: 1
Mult.: 1
Reel: 2.000

Si SMD/SMT TOLL-9 N-Channel 1 Channel 600 V 20 A 125 mOhms 30 V 4 V 28 nC + 150 C 150 W Enhancement Reel, Cut Tape
Toshiba MOSFETs N-ch MOSFET, 600 V, 0.063 ohma.10V, TO-247, DTMOS?
Datasheet
73In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 37 A 63 mOhms 30 V 4 V 56 nC + 150 C 242 W Enhancement Tube
Toshiba MOSFETs TO247 650V 1.69A N-CH
Datasheet
145In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 37 A 68 mOhms - 30 V, 30 V 4.5 V 68 nC - 55 C + 150 C 270 W Enhancement Tube
Toshiba MOSFETs TO220 150V 2.2A N-CH
Datasheet
381In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 150 V 120 A 4.9 mOhms - 20 V, 20 V 4.5 V 96 nC - 55 C + 175 C 300 W Enhancement Tube
Toshiba MOSFETs TO220 150V 2.2A N-CH
Datasheet
284In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220SIS-3 N-Channel 1 Channel 150 V 76 A 5 mOhms - 20 V, 20 V 4.5 V 96 nC - 55 C + 175 C 53 W Enhancement Tube
Toshiba MOSFETs TO220 150V 1.4A N-CH
Datasheet
350In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 150 V 84 A 7.2 mOhms - 20 V, 20 V 4.5 V 66 nC - 55 C + 175 C 230 W Enhancement Tube
Toshiba MOSFETs TO220 150V 1.4A N-CH
Datasheet
312In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220SIS-3 N-Channel 1 Channel 150 V 57 A 7.4 mOhms - 20 V, 20 V 4.5 V 66 nC - 55 C + 175 C 46 W Enhancement Tube
Toshiba MOSFETs TO220 150V 1.1A N-CH
Datasheet
294In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 150 V 52 A 9.6 mOhms - 20 V, 20 V 4.5 V 50 nC - 55 C + 175 C 200 W Enhancement Tube
Toshiba MOSFETs TO220 150V 1.1A N-CH
Datasheet
209In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220SIS-3 N-Channel 1 Channel 150 V 49 A 9.7 mOhms - 20 V, 20 V 4.5 V 50 nC - 55 C + 175 C 45 W Enhancement Tube
Toshiba MOSFETs N-ch MOSFET, 600 V, 0.099 O@10V, TO-247, DTMOS?
Datasheet
30In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 25 A 99 mOhms 30 V 36 nC + 150 C 176 W Enhancement Tube
Toshiba MOSFETs N-ch MOSFET, 650 V, 0.115 O@10V, TO-220SIS, DTMOS?
Datasheet
50In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220SIS-3 N-Channel 1 Channel 650 V 24 A 115 mOhms 30 V 4.5 V 42 nC + 150 C 45 W Enhancement Tube
Toshiba MOSFETs N-ch MOSFET, 650 V, 0.115 O@10V, TO-247, DTMOS?
Datasheet
30In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 24 A 115 mOhms 30 V 4.5 V 42 nC + 150 C 190 W Enhancement Tube
Toshiba MOSFETs N-ch MOSFET, 600 V, 0.125 ohma.10V, TO-220SIS, DTMOS?
Datasheet
50In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220SIS-3 N-Channel 1 Channel 600 V 20 A 125 mOhms 30 V 4 V 28 nC + 150 C 40 W Enhancement Tube
Toshiba MOSFETs N-ch MOSFET, 600 V, 0.155 ohma.10V, TO-220SIS, DTMOS?
Datasheet
3In Stock
150Expected 15/05/2026
Min.: 1
Mult.: 1

Si Through Hole TO-220SIS-3 N-Channel 1 Channel 600 V 17 A 155 mOhms 30 V 4 V 24 nC + 150 C 40 W Enhancement Tube