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QPD0060

Name: Qorvo QPD0060
Brand: Qorvo
SKU: 772-QPD0060
Price: 1052.23 DKK
Availability: InStock

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Mouser No:

772-QPD0060

Mfr. No:

QPD0060

Mfr.:

Qorvo

Description:

GaN FETs DC-3.6GHz GaN 90W 48V

Datasheet:

QPD0060 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Qorvo QPD0060

In Stock: 54

Stock:: 54 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	1.052,23 kr.	1.052,23 kr.
	736,53 kr.	18.413,25 kr.
Full Reel (Order in multiples of 100)
	633,58 kr.	63.358,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	DFN-6
Vds - Drain-Source Breakdown Voltage:	48 V
Minimum Operating Temperature:	- 40 C
Brand:	Qorvo
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	US
Development Kit:	QPD0060PCB4B01
Gain:	16.2 dB
Maximum Operating Frequency:	3.8 GHz
Minimum Operating Frequency:	1.8 GHz
Moisture Sensitive:	Yes
Output Power:	90 W
Packaging:	Reel
Packaging:	Cut Tape
Product Type:	GaN FETs
Series:	QPD0060
Factory Pack Quantity:	100
Subcategory:	Transistors
Technology:	GaN
Part # Aliases:	1131037 QPD0060SR

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Datasheet

QPD0060 Datasheet (PDF)

USHTS:: 8542390090
ECCN:: EAR99

GaN Transistor Solutions for Sub 6GHz 5G

Qorvo GaN Transistor Solutions for Sub-6GHz 5G are a broad portfolio of gallium nitride (GaN) discrete transistor products. The devices have varying levels of power, voltage, and frequency ratings in die-level and packaged solutions. Qorvo GaN Transistor Solutions for Sub-6GHz 5G provide high GaN performance plus the convenience of industry-standard packaging. This speeds design, manufacturing, and is backed by industry-leading reliability.

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.