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QPD0030

Name: Qorvo QPD0030
Brand: Qorvo
SKU: 772-QPD0030
Price: 671.33 DKK
Availability: InStock

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Mouser No:

772-QPD0030

Mfr. No:

QPD0030

Mfr.:

Qorvo

Description:

GaN FETs DC-4GHz 45W GaN 48V

Datasheet:

QPD0030 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Qorvo QPD0030

In Stock: 66

Stock:: 66

Can Dispatch Immediately

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On Order:: 425

Expected 30/04/2026
Factory Lead Time:: 16

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 250)

Cut Tape

MouseReel™ (+47,00 kr.)

This Product Ships FREE

Pricing (DKK)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	671,33 kr.	671,33 kr.
	527,12 kr.	13.178,00 kr.
	415,90 kr.	41.590,00 kr.
Full Reel (Order in multiples of 250)
	343,01 kr.	85.752,50 kr.

† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	QFN-20
Vds - Drain-Source Breakdown Voltage:	48 V
Minimum Operating Temperature:	- 40 C
Pd - Power Dissipation:	45 W
Brand:	Qorvo
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	US
Gain:	21.7 dB
Maximum Operating Frequency:	4 GHz
Minimum Operating Frequency:	0 Hz
Moisture Sensitive:	Yes
Output Power:	45 W
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product Type:	GaN FETs
Series:	QPD0030
Factory Pack Quantity:	250
Subcategory:	Transistors
Technology:	GaN
Part # Aliases:	1132528
Unit Weight:	9,664 g

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Filter Document:

Datasheet

QPD0030 Datasheet (PDF)

PCN

Product Change Notification 2026-2-13 (PDF)

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CNHTS:: 8541290000
CAHTS:: 8542390000
USHTS:: 8542390090
MXHTS:: 8542399999
ECCN:: 5A991.g

GaN Transistor Solutions for Sub 6GHz 5G

Qorvo GaN Transistor Solutions for Sub-6GHz 5G are a broad portfolio of gallium nitride (GaN) discrete transistor products. The devices have varying levels of power, voltage, and frequency ratings in die-level and packaged solutions. Qorvo GaN Transistor Solutions for Sub-6GHz 5G provide high GaN performance plus the convenience of industry-standard packaging. This speeds design, manufacturing, and is backed by industry-leading reliability.

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.