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SICW025N065H4-BP

Name: Micro Commercial Components (MCC) SICW025N065H4-BP
Brand: Micro Commercial Components (MCC)
SKU: 833-SICW025N065H4-BP
Price: 86.01 DKK
Availability: InStock

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Mouser No:

833-SICW025N065H4-BP

Mfr. No:

SICW025N065H4-BP

Mfr.:

Micro Commercial Components (MCC)

Description:

SiC MOSFETs SiC MOSFET,TO-247-4

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

SICW025N065H4-BP Datasheet (PDF)

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Learn more about Micro Commercial Components (MCC) SICW025N065H4-BP

In Stock: 360

Stock:: 360 Can Dispatch Immediately

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Factory Lead Time:: 52 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (DKK)

Qty.	Unit Price	Ext. Price
	86,01 kr.	86,01 kr.
	60,28 kr.	602,80 kr.
	49,53 kr.	4.953,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Micro Commercial Components (MCC)
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	107 A
Rds On - Drain-Source Resistance:	35 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	3.1 V
Qg - Gate Charge:	275 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	375 W
Channel Mode:	Enhancement
Brand:	Micro Commercial Components (MCC)
Configuration:	Single
Fall Time:	15 ns
Forward Transconductance - Min:	18.2 S
Packaging:	Bulk
Product:	SiC MOSFETS
Product Type:	SiC MOSFETS
Rise Time:	50 ns
Factory Pack Quantity:	1800
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	29 ns
Typical Turn-On Delay Time:	28 ns

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Datasheet

SICW025N065H4-BP Datasheet (PDF)

TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

SICWx Silicon Carbide (SiC) MOSFETs

Micro Commercial Components (MCC) SICWx Silicon Carbide (SiC) MOSFETs are high-speed switching 650V SiC MOSFETs. These MOSFETs utilise SiC MOSFET technology and are well-suited for high-voltage applications, providing reliable operation in harsh industrial environments. The SICWx MOSFETs are designed with low R_DS(on)and low gate charge to reduce switching losses and contribute to improved overall system efficiency. The efficiency-boosting design and TO-247 package deliver superior thermal performance, while the 3-pin or 4-pin (Kelvin-source pin) options enhance the versatility. The SICWx MOSFETs feature a rugged design and are avalanche capable, enabling better thermal management and efficiency. These MOSFETs are ideally used in power supplies, telecommunications, renewable energy systems, and motor drives.

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