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CG2H30070F

Name: MACOM CG2H30070F
Brand: MACOM
SKU: 941-CG2H30070F
Price: 3511.57 DKK
Availability: InStock

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See Product Specifications

Mouser No:

941-CG2H30070F

Mfr. No:

CG2H30070F

Mfr.:

MACOM

Description:

GaN FETs 70W, DC-4.0GHz, 28V, RF Power GaN HEMT

Datasheet:

CG2H30070F Datasheet (PDF)

ECAD Model:

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More Information

Learn more about MACOM CG2H30070F

Shipping Alert:

This product may require additional documentation to export from the United States.

In Stock: 32

Stock:: 32

Can Dispatch Immediately

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On Order:: 60

Expected 27/04/2026
Factory Lead Time:: 26

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

This Product Ships FREE

Pricing (DKK)

Qty.	Unit Price	Ext. Price
	3.511,57 kr.	3.511,57 kr.
	3.100,60 kr.	31.006,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	MACOM
Product Category:	GaN FETs
Delivery Restrictions:	This product may require additional documentation to export from the United States.
RoHS:
Mounting Style:	Screw Mount
Package/Case:	440224
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	120 V
Id - Continuous Drain Current:	12 A
Vgs th - Gate-Source Threshold Voltage:	- 3.8 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Brand:	MACOM
Development Kit:	CG2H30070F-TB1
Gain:	12.4 dB
Maximum Operating Frequency:	4 GHz
Minimum Operating Frequency:	0 Hz
Output Power:	70 W
Packaging:	Tray
Product Type:	GaN FETs
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	GaN HEMT
Vgs - Gate-Source Breakdown Voltage:	- 10 V, 2 V
Unit Weight:	10,466 g

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Datasheet

CG2H30070F Datasheet (PDF)

PCN

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290055
JPHTS:: 8541290100
MXHTS:: 85412999
ECCN:: 3A001.b.3.a.4

CG2H40xx & CG2H30xx GaN HEMTs

MACOM CG2H40xx and CG2H30xx Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are designed to operate from a 28V rail. These transistors offer a general-purpose broadband solution to a variety of RF and microwave applications. The high efficiency, high gain, and wide bandwidth capabilities make these HEMTs ideal for linear and compressed amplifier circuits. MACOM CG2H40xx and CG2H30xx transistors offer design flexibility with a wide variety of package types, including screw-down, solder-down, pill, and flange. Typical applications include broadband amplifiers, cellular infrastructure, and radar.