IRFB4620PBFXKMA1

Infineon Technologies
726-IRFB4620PBFXKMA1
IRFB4620PBFXKMA1

Mfr.:

Description:
MOSFETs IR FET >60-400V

ECAD Model:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
19 Weeks Estimated factory production time.
Minimum: 1000   Multiples: 1000
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:
This Product Ships FREE

Pricing (DKK)

Qty. Unit Price
Ext. Price
5,98 kr. 5.980,00 kr.
5,68 kr. 11.360,00 kr.
5,50 kr. 27.500,00 kr.

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-220AB-3
N-Channel
1 Channel
200 V
25 A
72.5 mOhms
- 20 V, 20 V
5 V
25 nC
- 55 C
+ 175 C
144 W
Enhancement
Tube
Brand: Infineon Technologies
Configuration: Single
Fall Time: 14.8 ns
Forward Transconductance - Min: 37
Product Type: MOSFETs
Rise Time: 22.4 ns
Factory Pack Quantity: 1000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 25.4 ns
Typical Turn-On Delay Time: 13.4 ns
Part # Aliases: IRFB4620PBFXKMA1 SP005745529
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TARIC:
8541290000
ECCN:
EAR99

200V to 250V HEXFET® Power MOSFETs

Infineon 200V to 250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200V to 250V HEXFET Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with fast switching speed and ruggedized device design provides an extremely efficient and reliable device for use in a wide variety of applications.