|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
- SCT012W90G3-4AG
- STMicroelectronics
-
1:
133,16 kr.
-
640In Stock
-
New Product
|
Mouser Part No
511-SCT012W90G3-4AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
|
|
640In Stock
|
|
|
133,16 kr.
|
|
|
113,47 kr.
|
|
|
98,17 kr.
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
1 Channel
|
900 V
|
110 A
|
15.8 mOhms
|
- 10 V, + 22 V
|
3.1 V
|
138 nC
|
- 55 C
|
+ 200 C
|
625 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
- SCT025W120G3AG
- STMicroelectronics
-
1:
115,78 kr.
-
502In Stock
-
New Product
|
Mouser Part No
511-SCT025W120G3AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
|
|
502In Stock
|
|
|
115,78 kr.
|
|
|
92,73 kr.
|
|
|
80,12 kr.
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 200 C
|
388 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
- SCT015W120G3-4AG
- STMicroelectronics
-
1:
155,47 kr.
-
600Expected 26/10/2026
|
Mouser Part No
511-SCT015W120G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
|
|
600Expected 26/10/2026
|
|
|
155,47 kr.
|
|
|
127,19 kr.
|
|
|
112,35 kr.
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
129 A
|
15 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
167 nC
|
- 55 C
|
+ 200 C
|
673 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
- SCT040W120G3-4
- STMicroelectronics
-
1:
73,03 kr.
-
100On Order
-
New Product
|
Mouser Part No
511-SCT040W120G3-4
New Product
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
|
|
100On Order
|
|
|
73,03 kr.
|
|
|
59,46 kr.
|
|
|
49,53 kr.
|
|
|
44,16 kr.
|
|
|
37,52 kr.
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 10 V, + 22 V
|
3.1 V
|
56 nC
|
- 55 C
|
+ 200 C
|
312 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A in a HiP247-4 package
- SCT019W120G3-4AG
- STMicroelectronics
-
1:
118,99 kr.
-
Non-Stocked Lead-Time 17 Weeks
-
New Product
|
Mouser Part No
511-SCT019W120G3-4AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A in a HiP247-4 package
|
|
Non-Stocked Lead-Time 17 Weeks
|
|
|
118,99 kr.
|
|
|
95,26 kr.
|
|
|
82,36 kr.
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
90 A
|
26 mOhms
|
- 10 V, + 22 V
|
4.2 V
|
120 nC
|
- 55 C
|
+ 200 C
|
486 W
|
|
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
- SCT025W120G3-4
- STMicroelectronics
-
600:
75,27 kr.
-
Non-Stocked Lead-Time 17 Weeks
-
New Product
|
Mouser Part No
511-SCT025W120G3-4
New Product
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
|
|
Non-Stocked Lead-Time 17 Weeks
|
|
Min.: 600
Mult.: 600
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
37 mOhms
|
-10 V, 22 V
|
4.2 V
|
73 nC
|
- 55 C
|
+ 200 C
|
388 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
- SCT070W120G3-4
- STMicroelectronics
-
1:
70,12 kr.
-
Non-Stocked Lead-Time 17 Weeks
-
New Product
|
Mouser Part No
511-SCT070W120G3-4
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
|
|
Non-Stocked Lead-Time 17 Weeks
|
|
|
70,12 kr.
|
|
|
41,93 kr.
|
|
|
35,66 kr.
|
|
|
34,61 kr.
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
|
1.2 kV
|
30 A
|
87 mOhms
|
- 10 V, + 22 V
|
3 V
|
41 nC
|
- 55 C
|
+ 200 C
|
236 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A
- SCT070W120G3AG
- STMicroelectronics
-
1:
77,88 kr.
-
Non-Stocked Lead-Time 17 Weeks
-
New Product
|
Mouser Part No
511-SCT070W120G3AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A
|
|
Non-Stocked Lead-Time 17 Weeks
|
|
|
77,88 kr.
|
|
|
63,41 kr.
|
|
|
52,89 kr.
|
|
|
47,07 kr.
|
|
|
40,06 kr.
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package
- SCTWA40N120G2V
- STMicroelectronics
-
1:
115,70 kr.
-
Non-Stocked Lead-Time 32 Weeks
-
NRND
|
Mouser Part No
511-SCTWA40N120G2V
NRND
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package
|
|
Non-Stocked Lead-Time 32 Weeks
|
|
|
115,70 kr.
|
|
|
88,18 kr.
|
|
|
74,08 kr.
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
36 A
|
100 mOhms
|
- 10 V, + 22 V
|
2.45 V
|
61 nC
|
- 55 C
|
+ 200 C
|
278 W
|
Enhancement
|
|
|
Denmark
