STDRIVEG612QTR

STMicroelectronics
511-STDRIVEG612QTR
STDRIVEG612QTR

Mfr.:

Description:
Gate Drivers High voltage and high-speed half-bridge gate driver for GaN power switches
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New Product:
New from this manufacturer.
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Availability

Stock:
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On Order:
1.000
Expected 25/02/2026
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
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Pricing (DKK)

Qty. Unit Price
Ext. Price
31,03 kr. 31,03 kr.
20,74 kr. 207,40 kr.
19,32 kr. 483,00 kr.
16,93 kr. 1.693,00 kr.
16,04 kr. 4.010,00 kr.
14,47 kr. 7.235,00 kr.
13,13 kr. 13.130,00 kr.
Full Reel (Order in multiples of 3000)
11,19 kr. 33.570,00 kr.

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: Gate Drivers
Gate Driver
Half-Bridge
SMD/SMT
QFN-18
2 Driver
3 Output
1.8 A
10.3 V
18 V
Inverting, Non-Inverting
22 ns
13 ns
- 40 C
+ 125 C
Reel
Cut Tape
Brand: STMicroelectronics
Maximum Turn-Off Delay Time: 65 ns
Maximum Turn-On Delay Time: 65 ns
Output Voltage: 520 V
Product Type: Gate Drivers
Propagation Delay - Max: 65 ns
Rds On - Drain-Source Resistance: 6.8 Ohms
Shutdown: Shutdown
Factory Pack Quantity: 3000
Subcategory: PMIC - Power Management ICs
Technology: GaN
Tradename: STDRIVE
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Attributes selected: 0

Datasheet

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STDRIVEG612 600V Half-Bridge Gate Driver

STMicroelectronics STDRIVEG612 600V High-Speed Half-Bridge Gate Driver is optimized for 5V driving enhanced-mode GaN HEMTs. The high-side driver section is designed to support a voltage rail of up to 600V and can be easily supplied by the integrated bootstrap diode. High-current capability, short propagation delay with excellent delay matching, and integrated LDOs make the STDRIVEG612 optimized for driving high-speed GaN.

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