IS66WVH8M8BLL-100B1LI

ISSI
870-WVH8M8BLL100B1LI
IS66WVH8M8BLL-100B1LI

Mfr.:

Description:
DRAM 64Mb 8Mbx8 3.0V 100MHz HyperRAM

ECAD Model:
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In Stock: 781

Stock:
781
Can Dispatch Immediately
On Order:
480
Expected 17/04/2026
Factory Lead Time:
14
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1   Maximum: 423
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:

Pricing (DKK)

Qty. Unit Price
Ext. Price
36,70 kr. 36,70 kr.
34,17 kr. 341,70 kr.
33,20 kr. 830,00 kr.
33,05 kr. 1.652,50 kr.
32,30 kr. 3.230,00 kr.
30,96 kr. 7.740,00 kr.

Product Attribute Attribute Value Select Attribute
ISSI
Product Category: DRAM
RoHS:  
HyperRAM
64 Mbit
8 bit
100 MHz
TFGBA-24
8 M x 8
40 ns
2.7 V
3.6 V
- 40 C
+ 85 C
IS66WVH8M8BLL
Brand: ISSI
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 480
Subcategory: Memory & Data Storage
Supply Current - Max: 35 mA
Tradename: HyperRAM
Unit Weight: 84 mg
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Attributes selected: 0

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CNHTS:
8542329010
CAHTS:
8542320020
USHTS:
8542320002
JPHTS:
854232029
KRHTS:
8542321020
MXHTS:
8542320299
ECCN:
EAR99

HYPERRAM™ Self-refresh DRAM

ISSI HYPERRAM™ Self-Refresh DRAMs are high-speed CMOS with a HYPERBUS™ interface. The HYPERBUS is a low signal count, Double Data Rate (DDR) interface that allows high-speed read and write throughput. These devices are available in KGD/KTD and 24-pin BGA packages with 32Mb, 64Mb, 128Mb, and 256Mb densities. Other features include hidden refresh operation and low power consumption. These memory devices are ideal for mobile and automotive applications.